Abstract: Embodiments of multi-zone showerheads are provided herein. In some embodiments, a multi-zone showerhead includes: a body having an outer surface and including a plurality of fluidly independent plenums; and a plurality of gas distribution plugs extending through the body, wherein at least one gas distribution plug includes a first internal gas passageway coupling a first plenum of the plurality of fluidly independent plenums to the outer surface and a second internal gas passageway coupling a second plenum of the plurality of fluidly independent plenums to the outer surface. In some embodiments, the body can include: a top plate; a bottom plate; and one or more intermediate plates disposed between the top plate and the bottom plate, wherein individual plenums of the plurality of fluidly independent plenums are respectively defined between adjacent plates of the top plate, the bottom plate, and the one or more intermediate plates.

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a shield for use in a physical vapor deposition chamber, comprises an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, an annular groove formed in an inner wall of the one-piece body, and a plurality of gas distribution vents disposed along the annular feature and formed through the one-piece body, wherein the plurality of gas distribution vents are spaced apart from each other to distribute gases into the inner volume in a desired pattern.

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

Abstract: Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

Abstract: Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

Abstract: A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

Abstract: A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.

Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

Abstract: In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.