Patents by Inventor Muhammed Shafi Kurikka Valappil PALLACHALIL

Muhammed Shafi Kurikka Valappil PALLACHALIL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to reduce depth delta between dense and wide features in dual damascene structures
    Patent number: 8822342
    Abstract: A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: September 2, 2014
    Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Ravi Prakash Srivastava, Oluwafemi. O. Ogunsola, Craig Child, Muhammed Shafi Kurikka Valappil Pallachalil, Habib Hichri, Matthew Angyal, Hideshi Miyajima
  • METHOD TO REDUCE DEPTH DELTA BETWEEN DENSE AND WIDE FEATURES IN DUAL DAMASCENE STRUCTURES
    Publication number: 20120168957
    Abstract: A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.
    Type: Application
    Filed: December 30, 2010
    Publication date: July 5, 2012
    Applicants: GLOBALFOUNDRIES SINGAPORE PTE. LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION, TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., INFINEON TECHNOLOGIES NORTH AMERICA CORP., ADVANCED MICRO DEVICES CORPORATION
    Inventors: Ravi Prakash SRIVASTAVA, Oluwafemi O. OGUNSOLA, Craig CHILD, Muhammed Shafi Kurikka Valappil PALLACHALIL, Habib HICHRI, Matthew ANGYAL, Hideshi MIYAJIMA