Abstract: A ultra-wideband interconnection probe (100) connectable to a first access port of a first electronic device (101), the first access port comprising a first tapered coupler (101a) and to a second access port of a second electronic device (102), the second access port comprising a second tapered coupler (102a), the ultra-wideband interconnection probe (100) comprising a dielectric waveguide structure (120) establishing a high-pass characteristic interconnect, operating over a high frequency range starting from a low cut-off frequency fCL in the microwave range or in the millimeter-wave range, wherein the dielectric waveguide structure (120) comprises a first tapered end (120a) connectable to the first access port via the first tapered coupler (101a) and a second tapered end (120b) connectable to the second access port via the second tapered coupler (102a).

Abstract: An ultra-wideband hybrid structure (100) for transmitting high-frequency electrical signals, the structure comprising a substrate (110), a high-speed semiconductor substrate (105) connected to the substrate (110) of the ultra-wideband structure (100), a conductive interface (115) established between the substrate (110) and the high-speed semiconductor substrate (105), an ultrahigh speed device defining a first access port (P1) and established on the high-speed semiconductor substrate (105), a dielectric waveguide structure (DRW) defining a second access port (P2), the structure (DRW) established on the substrate (110) and on the high-speed semiconductor substrate (105), the structure (DRW) comprises a tapered end connectable to the first access port (P1) of the ultrahigh speed device, a metal waveguide structure (TSA) providing a low-pass characteristic interconnection, the structure (TSA) established on the substrate (110) and on the high-speed semiconductor substrate (105), wherein the metal waveguide struc

Abstract: A ultra-wideband interconnection probe (100) connectable to a first access port of a first electronic device (101), the first access port comprising a first tapered coupler (101a) and to a second access port of a second electronic device (102), the second access port comprising a second tapered coupler (102a), the ultra-wideband interconnection probe (100) comprising a dielectric waveguide structure (120) establishing a high-pass characteristic interconnect, operating over a high frequency range starting from a low cut-off frequency fa in the microwave range or in the millimeter-wave range, wherein the dielectric waveguide structure (120) comprises a first tapered end (120a) connectable to the first access port via the first tapered coupler (101a) and a second tapered end (120b) connectable to the second access port via the second tapered coupler (102a).