Abstract: A capacitance sensor comprises an asynchronous ring first in first out (FIFO) oscillator circuit having an electrode for receiving a sample for analysis. A sample placed into contact with the electrode causes a change in capacitance at the electrode which gives rise to a change in the oscillation frequency of the ring. This change in oscillation frequency can be used to identify the sample.

Abstract: An SRAM memory cell employing thin-film transistors is provided having a first transmission gate, a second transmission gate and a bi-stable flip-flop comprising a first and a second inverter disposed between the first and the second transmission gate. A third transmission gate is coupled between an output terminal of the second inverter and an input terminal of the first inverter.

Abstract: An SRAM memory cell employing thin-film transistors is provided having a first transmission gate, a second transmission gate and a bi-stable flip-flop comprising a first and a second inverter disposed between the first and the second transmission gate. A third transmission gate is coupled between an output terminal of the second inverter and an input terminal of the first inverter.

Abstract: A large scale integrated (LSI) or a very large scale integrated (VLSI) logic circuit, such as a fully programmable gate array (FPGA), comprises a plurality of polysilicon thin film transistors TFTs. The circuit, which may include a delay circuit, is asynchronous and does not comprise a clock. Thus, operations to be performed by the TFTs need not be performed within a single clock period—rather the operation of each stage of TFTs in the circuit is dependent on receiving a signal either from an input to the circuit or from a preceding stage in the circuit. Problems with variations in the threshold voltage between the TFTs are therefore avoided.

Abstract: A capacitance sensor comprises an asynchronous ring first in first out (FIFO) oscillator circuit having an electrode for receiving a sample for analysis. A sample placed into contact with the electrode causes a change in capacitance at the electrode which gives rise to a change in the oscillation frequency of the ring. This change in oscillation frequency can be used to identify the sample.

Abstract: A large scale integrated (LSI) or a very large scale integrated (VLSI) logic circuit. such as a fully progammable gate array (FPGA), comprises a plurality of polysilicon thin film transistors TFTs. The circuit, which may include a delay circuit, is asynchronous and does not comprise a clock. Thus, operations to be performed by the TFTs need not be performed within a single clock period—rather the operation of each stage of TFTs in the circuit is dependent on receiving a signal either from an input to the circuit or from a preceding stage in the circuit. Problems with variations in the threshold voltage between the TFTs are therefore avoided.