Abstract: Provided is a heat generating liquid circulator having an improved structural design. A heat generating liquid circulator in accordance with an embodiment of the present disclosure includes a power part configured to generate rotational driving force for liquid circulation and receive power having a single polarity, and a housing having at least one opening through which a liquid flows and configured to accommodate the power part therein and receive power having a polarity opposite to that of the power part.

Abstract: The present disclosure relates to a manufacturing method of an aluminum forging wheel, the manufacturing method being able to homogenize a material, optimize flow ability, prevent picking inside a wheel, and densify the internal structure of an aluminum forging wheel. The manufacturing method of an aluminum forging wheel includes: a billet preparation step S1 of preparing an aluminum billet to manufacture an aluminum forging wheel; a first forming step S2 of manufacturing a primary forming product by performing hot forging on the billet prepared in the billet preparation step S1; a second forming step S3 of manufacturing an aluminum forging wheel that is a secondary forming product by performing hot forging on the primary forming product manufactured in the first forming step S2; and a second machining step S5 of preheating the aluminum forging wheel manufactured in the first forming step S3 and performing F/F.

Abstract: Provided is a method for manufacturing a composition for increasing cognitive function.

Abstract: An electric car charging apparatus using a pad-mounted transformer according to one embodiment of the present invention may include a first port configured to supply power to an electric car, a second port electrically connected to the first port and configured to receive power from a pad-mounted transformer, and a breaking unit configured to switch between connection and disconnection of the first port and the second port.

Abstract: A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

Abstract: A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.

Abstract: According to an embodiment of the present invention, provided is an electrode heating device including: a device housing; an electrode heating unit including a central conductor, an internal conductor disposed to form a gap inside the central conductor, and an external conductor disposed to form the gap outside the central conductor, and received and installed in the device housing; and a control board received and installed inside the device housing, and applying power to an electrode of the electrode heating unit, and controlling a heat generation operation of the electrode heating unit.

Abstract: The present disclosure relates to a manufacturing method of an aluminum forging wheel, the manufacturing method being able to homogenize a material, optimize flow ability, prevent picking inside a wheel, and densify the internal structure of an aluminum forging wheel. The manufacturing method of an aluminum forging wheel includes: a billet preparation step S1 of preparing an aluminum billet to manufacture an aluminum forging wheel; a first forming step S2 of manufacturing a primary forming product by performing hot forging on the billet prepared in the billet preparation step S1; a second forming step S3 of manufacturing an aluminum forging wheel that is a secondary forming product by performing hot forging on the primary forming product manufactured in the first forming step S2; and a second machining step S5 of preheating the aluminum forging wheel manufactured in the first forming step S3 and performing F/F.

Abstract: Provided is a pharmaceutical composition for treating a degenerative brain disease, including a glycine transporter as an active ingredient. A composition including, as an active ingredient, a glycine transporter protein, a fragment thereof or a nucleic acid molecule encoding the protein or the fragment thereof, a vector including the nucleic acid molecule, or a cell transformed with the vector including the nucleic acid molecule, according to an embodiment, not only can achieve excellent effect(s) of inhibiting amyloid-beta aggregation and/or degrading aggregated amyloid-beta, but also degrades tau protein (and/or inhibition of the aggregation thereof), inhibits the hyperphosphorylation of tau protein, and has excellent blood-brain barrier permeability, thus making it possible to successively act on brain tissues.

Abstract: A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.

Abstract: An electric car charging apparatus using a pad-mounted transformer according to one embodiment of the present invention may include a first port configured to supply power to an electric car, a second port electrically connected to the first port and configured to receive power from a pad-mounted transformer, and a breaking unit configured to switch between connection and disconnection of the first port and the second port.

Abstract: A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.

Abstract: A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.

Abstract: A method for fabricating a semiconductor device includes: forming a lower array including a plurality of bottom electrodes over a semiconductor substrate, a supporter supporting the bottom electrodes, and a dielectric layer that is formed over the bottom electrodes and the supporter; forming a gap-fill layer covering side portions of the lower array and an upper portion of the lower array; forming a capping portion covering the upper portion of the lower array over the gap-fill layer; performing a pull-back process of the gap-fill layer to form a gap-fill electrode aligned with the capping portion; and forming a low-resistivity electrode over the gap-fill electrode.

Abstract: A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

Abstract: A method for fabricating a semiconductor device includes: forming a lower array including a plurality of bottom electrodes over a semiconductor substrate, a supporter supporting the bottom electrodes, and a dielectric layer that is formed over the bottom electrodes and the supporter; forming a gap-fill layer covering side portions of the lower array and an upper portion of the lower array; forming a capping portion covering the upper portion of the lower array over the gap-fill layer; performing a pull-back process of the gap-fill layer to form a gap-fill electrode aligned with the capping portion; and forming a low-resistivity electrode over the gap-fill electrode.

Abstract: A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

Abstract: A method for fabricating a semiconductor device includes: forming a lower array including a plurality of bottom electrodes over a semiconductor substrate, a supporter supporting the bottom electrodes, and a dielectric layer that is formed over the bottom electrodes and the supporter; forming a gap-fill layer covering side portions of the lower array and an upper portion of the lower array; forming a capping portion covering the upper portion of the lower array over the gap-fill layer; performing a pull-back process of the gap-fill layer to form a gap-fill electrode aligned with the capping portion; and forming a low-resistivity electrode over the gap-fill electrode.

Abstract: A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.

Abstract: A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.