Abstract: Microbolometer is a class of infrared detector whose resistance changes when the temperature changes. In this work, we deposited and characterized Germanium Oxide thin films mixed with Sn (Ge—Sn—O) for uncooled infrared detection. Ge—Sn—O were deposited by co-sputtering of Sn and Ge targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Sn—O was most sensitive in the wavelength ranges between 1.0-3.0 ?m. The transmission data was further used to determine the optical energy band gap (0.678 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (1.4802×105 m-1-1.0097×107 m?1), refractive index (1.242-1.350), and the extinction coefficient (0.3255-8.010) for the wavelength ranges between 1.0-3.0 ?m. The thin film's resistivity measured by the four point probe was found to be 4.55 ?-cm and TCR was in the range of ?2.56-?2.25 (%/K) in the temperature range 292-312K.

Abstract: Microbolometer is a class of infrared detector whose resistance changes when the temperature changes. In this work, we deposited and characterized Germanium Oxide thin films mixed with Sn (Ge—Sn—O) for uncooled infrared detection. Ge—Sn—O were deposited by co-sputtering of Sn and Ge targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Sn—O was most sensitive in the wavelength ranges between 1.0-3.0 ?m. The transmission data was further used to determine the optical energy band gap (0.678 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (1.4802×105 m?1-1.0097×107 m?1), refractive index (1.242-1.350), and the extinction coefficient (0.3255-8.010) for the wavelength ranges between 1.0-3.0 ?m. The thin film's resistivity measured by the four point probe was found to be 4.55 ?-cm and TCR was in the range of ?2.56-?2.25 (%/K) in the temperature range 292-312K.

Abstract: Microbolometer is a class of infrared detector whose resistance changes with temperature change. In this work, we deposited and characterized Germanium Silicon Oxide thin films mixed with Sn (Ge—Si—Sn—O) for uncooled infrared detection. Ge—Si—Sn—O were deposited by co-sputtering of Sn and Ge—Si targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Si—Sn—O was most sensitive in the wavelength ranges between 2.5-3.7 ?m. The transmission data was further used to determine the optical energy band gap (0.22 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (6592305.87 m?1-11615736.95 m?1), refractive index (2.5-4.0), and the extinction coefficient (2.31-5.73) for the wavelength ranges between 2.5-5.5 ?m. The thin film's resistivity measured by the four-point probe was found to be 142.55 ?-cm and TCR was in the range of ?4.9-?3.1 (%/K) in the temperature range 289-325K.

Abstract: Microbolometer is a class of infrared detector whose resistance changes when the temperature changes. In this work, we deposited and characterized Germanium Silicon Oxide thin films mixed with Sn (Ge—Si—Sn—O) for uncooled infrared detection. Ge—Si—Sn—O were deposited by co-sputtering of Sn and Ge—Si targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Si—Sn—O was most sensitive in the wavelength ranges between 2.5-3.7 ?m. The transmission data was further used to determine the optical energy band gap (0.22 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (6592305.87 m?1-11615736.95 m?1), refractive index (2.5-4.0), and the extinction coefficient (2.31-5.73) for the wavelength ranges between 2.5-5.5 ?m. The thin film's resistivity measured by the four point probe was found to be 142.55 ?-cm and TCR was in the range of ?4.9-?3.1 (%/k) in the temperature range 289-325 k.

Abstract: A semiconducting microbolometer sensor for detecting electromagnetic waves in the medium wavelength infrared (MWIR) and long-wavelength infrared (LWIR) is provided. A preferred embodiment provides a substrate layer, a bottom and top support structure with a strut-based mesh design, a meandered electrode layer that follows the top support structure design, a bolometer sensing material with a high TCR, and a disk-shaped absorber on top of the sensing material to maximize the heat flux absorption on the sensor. The bottom support of the sensor suspends the top support mesh, creating an air cavity. This air cavity along with the strut based mesh design and optimized thickness, dimension and shape of the layers contributed towards minimizing the thermal conductance of microbolometer and hence improved the figures of merits—responsivity, detectivity, noise equivalent power and noise equivalent temperature difference of microbolometer.

Abstract: Microbolometer is a class of infrared detector whose resistance changes when the temperature changes. In this work, we deposited and characterized Germanium Oxide thin films mixed with Sn (Ge—Sn—O) for uncooled infrared detection. Ge—Sn—O were deposited by co-sputtering of Sn and Ge targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Sn—O was most sensitive in the wavelength ranges between 1.0-3.0 ?m. The transmission data was further used to determine the optical energy band gap (0.678 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (1.4802×105 m-1-1.0097×107 m?1), refractive index (1.242-1.350), and the extinction coefficient (0.3255-8.010) for the wavelength ranges between 1.0-3.0 ?m. The thin film's resistivity measured by the four point probe was found to be 4.55 ?-cm and TCR was in the range of ?2.56-?2.25 (%/K) in the temperature range 292-312K.

Abstract: A semiconducting microbolometer sensor for detecting electromagnetic waves in the medium wavelength infrared (MWIR) and long-wavelength infrared (LWIR) is provided. A preferred embodiment provides a substrate layer, a bottom and top support structure with a strut-based mesh design, a meandered electrode layer that follows the top support structure design, a bolometer sensing material with a high TCR, and a disk-shaped absorber on top of the sensing material to maximize the heat flux absorption on the sensor. The bottom support of the sensor suspends the top support mesh, creating an air cavity. This air cavity along with the strut based mesh design and optimized thickness, dimension and shape of the layers contributed towards minimizing the thermal conductance of microbolometer and hence improved the figures of merits—responsivity, detectivity, noise equivalent power and noise equivalent temperature difference of microbolometer.