Patents by Inventor Mukul Khosla
Mukul Khosla has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11702738Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.Type: GrantFiled: May 17, 2021Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Yi Zhou, Xinyue Chen, Mukul Khosla, Yangchung Lee
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Publication number: 20220364227Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.Type: ApplicationFiled: May 17, 2021Publication date: November 17, 2022Applicant: Applied Materials, Inc.Inventors: Yi Zhou, Xinyue Chen, Mukul Khosla, Yangchung Lee
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Patent number: 10115608Abstract: A gas expansion module for use with semiconductor wafer loadlocks and other regulated-pressure components of semiconductor processing tools is provided. The gas expansion module may be barometrically isolated from the loadlock or other component and pumped down to a vacuum condition while the loadlock is performing operations at a higher pressure, such as ambient atmospheric conditions. After an initial pump-down of the loadlock is performed, the gas expansion module may be fluidly joined to the loadlock volume and the gases within each allowed to reach equilibrium. A further pump-down of the combined volume may be used to bring the loadlock pressure to a desired vacuum condition.Type: GrantFiled: May 23, 2013Date of Patent: October 30, 2018Assignee: Novellus Systems, Inc.Inventors: Edmund B. Minshall, Victor F. Morris, Ram Charan, Ronald A. Powell, Mukul Khosla
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Patent number: 9275884Abstract: A substrate handling robot includes an arm section and a wrist portion connected to the arm section. An end effector is connected to the wrist portion and is configured to support a substrate. A housing is arranged adjacent to the end effector and includes a gas outlet that directs gas onto an exposed surface of the substrate during transport.Type: GrantFiled: March 14, 2012Date of Patent: March 1, 2016Assignee: Novellus Systems, Inc.Inventors: Mukul Khosla, Ronald Powell, Arun Keshavamurthy, Richard Blank
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Publication number: 20130312835Abstract: A gas expansion module for use with semiconductor wafer loadlocks and other regulated-pressure components of semiconductor processing tools is provided. The gas expansion module may be barometrically isolated from the loadlock or other component and pumped down to a vacuum condition while the loadlock is performing operations at a higher pressure, such as ambient atmospheric conditions. After an initial pump-down of the loadlock is performed, the gas expansion module may be fluidly joined to the loadlock volume and the gases within each allowed to reach equilibrium. A further pump-down of the combined volume may be used to bring the loadlock pressure to a desired vacuum condition.Type: ApplicationFiled: May 23, 2013Publication date: November 28, 2013Inventors: Edmund B. Minshall, Victor F. Morris, Ram Charan, Ronald A. Powell, Mukul Khosla
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Publication number: 20130312663Abstract: A vapor delivery apparatus for providing a precursor vapor for a vapor deposition process includes a precursor container for holding a liquid or solid precursor. A first temperature control assembly maintains the precursor container at a first temperature to generate a vapor precursor from the liquid or solid precursor. An isolation valve is coupled to the precursor container, and a specific quantity of the vapor precursor is accumulated in an expansion volume. A fill valve, which is coupled to each of the isolation valve and the expansion volume, controls the flow of the vapor precursor from the precursor container into the expansion volume. A second temperature control assembly maintains the isolation valve at a second temperature greater than the first temperature.Type: ApplicationFiled: May 22, 2012Publication date: November 28, 2013Applicant: Applied Microstructures, Inc.Inventors: Mukul Khosla, Mike Grimes, Peter Krotov, Genny Epshteyn
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Publication number: 20120251271Abstract: A substrate handling robot includes an arm section and a wrist portion connected to the arm section. An end effector is connected to the wrist portion and is configured to support a substrate. A housing is arranged adjacent to the end effector and includes a gas outlet that directs gas onto an exposed surface of the substrate during transport.Type: ApplicationFiled: March 14, 2012Publication date: October 4, 2012Applicant: Novellus Systems, Inc.Inventors: Mukul Khosla, Ronald Powell, Arun Keshavamurthy, Richard Blank
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Patent number: 6726824Abstract: The present invention provides methods and apparatus for analysis and monitoring of electrolyte bath composition. Based on the results of the analysis, the invention controls electrolyte bath composition and plating hardware. Thus, the invention provides control of electroplating processes based on plating bath composition data. The invention accomplishes this by incorporating mass spectral analysis into a feedback control mechanism for electroplating. Mass spectrometry is used to identify plating bath conditions and based on the results, the plating bath formulation and plating process are controlled.Type: GrantFiled: April 11, 2001Date of Patent: April 27, 2004Assignee: Novellus Systems, Inc.Inventor: Mukul Khosla
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Patent number: 6667474Abstract: The present invention relates to a heated capillary assembly which connects an atmospheric pressure ionization source to a lower pressure mass analyzing system which comprises a capillary tube removably secured to, and extending through the bore of a capillary support assembly.Type: GrantFiled: October 27, 2000Date of Patent: December 23, 2003Assignee: Thermo Finnigan LLCInventors: Jeffrey B. Abramson, Nigel P. Gore, Mukul Khosla, Iain C. Mylchreest, Keqi Tang, Eric B. Johnson
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Patent number: 6554914Abstract: The present invention pertains to systems and methods for passivating the copper seed layer deposited in Damascene integrated circuit manufacturing. More specifically, the invention pertains to systems and methods for depositing the copper seed layer by physical vapor deposition, while passivating the copper during or immediately after the deposition in order to prevent excessive oxidation of the copper. The invention is applicable to dual Damascene processing.Type: GrantFiled: February 2, 2001Date of Patent: April 29, 2003Assignee: Novellus Systems, Inc.Inventors: Robert T. Rozbicki, Ronald Allan Powell, Erich Klawuhn, Michal Danek, Karl B. Levy, Jonathan David Reid, Mukul Khosla, Eliot K. Broadbent
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Patent number: 6497734Abstract: A multi-level shelf degas station relying on at least two heaters integrated within wafer holding shelves or slots, where the semiconductor wafers do not have direct contact with the heater shelves. The heaters provide conduction heating. In order to degas a wafer, the heater and wafer holder assembly is positioned in a sequential manner through each wafer slot to the next available slot. If a degassed wafer exists in the slot, a transfer chamber arm removes it. A loader arm then places a wafer in the available, empty slot and the stage is moved upwards to receive the wafer from the loader arm. The transfer chamber arm removes an individual wafer from the heater and wafer holder assembly allowing the removed wafer to be individually processed while the other wafers remain in the heater and wafer holder assembly. In some instances, a loader arm may also remove wafers.Type: GrantFiled: January 2, 2002Date of Patent: December 24, 2002Assignee: Novellus Systems, Inc.Inventors: Kenneth K. Barber, Mark Fissel, Soo Yun Joh, Mukul Khosla, Karl B. Levy, Robert Martinson, Michael Meyers, Dhairya Shrivastava
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Patent number: 6441370Abstract: A multiple-pole electrode assembly is disclosed for use in mass spectrometers or other applications such as ion traps or ion guides. The disclosed apparatus provides a rod mounting and connection assembly in which equally spaced rectangular rods are embedded in spaced, dimensionally stable insulating materials. This structure is more conveniently and inexpensively manufactured than previously available multiple pole electrode assemblies.Type: GrantFiled: April 11, 2000Date of Patent: August 27, 2002Assignee: Thermo Finnigan LLCInventors: Mukul Khosla, Berg Tehlirian
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Patent number: 6319842Abstract: Non-volatile and oxide residues that form during semiconductor processing are removed from the semiconductor structure in a two-stage process. An inert gas and a reducing gas are introduced to the reactor. In the first stage, the non-volatile contaminants are sputtered from the semiconductor structure by creating a plasma to ionize the inert gas. The power applied to the plasma is preferably high enough to give the ions of the inert gas a high degree of directionality as they approach the structure. The first stage is continued until the non-volatile contaminants have been sufficiently removed from the structure. In the second stage, the power is reduced and the reducing gas (e.g., hydrogen) reacts with the oxides (e.g., copper oxide) to form elemental metal and water vapor. During the second stage there is no appreciable sputtering, and therefore the damage to the structure is limited as compared with processes that use sputtering and reduction simultaneously.Type: GrantFiled: January 2, 2001Date of Patent: November 20, 2001Assignee: Novellus Systems IncorporatedInventors: Mukul Khosla, Lap Tam, Ronald A. Powell, Ronald D. Allen, Robert T. Rozbicki, Erich Klawuhn, E. Derryck Settles
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Patent number: 5543625Abstract: A filament assembly is disclosed for providing an electron beam to an ion source volume to ionize molecules or particles in the ion source volume. The filament assembly includes an electron lens which accelerates electrons emitted by the filament and focuses the electrons into a beam.Type: GrantFiled: May 20, 1994Date of Patent: August 6, 1996Assignee: Finnigan CorporationInventors: Bruce S. Johnson, Mukul Khosla, John R. Herron, John M. Brassil, Alan E. Schoen