Abstract: A method and a system are disclosed for pixel-embedded signal amplification of a CMOS image sensor using multi-step voltage-gain enhancement. It involves activating a row of the CMOS image sensor by resetting switches SRST 202, SH1 201 and SH2 209 to charge nodes PD1, PD2, SD1, and SD2 to a pre-set voltage potential and VRST 203. The CMOS sensor switches OFF SRST 202, SH1 201 and SH2 209 for integration of the charges at PD1 for producing a corresponding photo-generated signal. This signal is sampled by transferring to a gate of source follower SF1, to produce an amplified signal. It further involves double-sampling the amplified signal for removing any pixel-offset variation to produce a resultant signal. The said method is repeated for second row of CMOS image sensor for implementing additional gain on the resultant voltage signal, and the same is finally converted to digital bits to obtain an output signal of with enhanced gain.

Abstract: A method and a system are described for improving a dynamic range of a CMOS image sensor by pixel-embedded signal amplification. An electromagnetic radiation is incident for a predetermined duration on a pixel array including a plurality of photodiodes. The photodiodes release electrons in form of an input electronic signal and the released input signal is temporarily stored in a storage node. The said input signal is then transferred to a gate of an in-pixel amplifier, which is configured to dynamically alternate between modes of capacitance and switched biasing, using a single in-pixel switch. Then, the in-pixel amplifier is modulated while in capacitance mode for a voltage build-up and this augment gain of the input signal. Thereafter, the in-pixel amplifier alternates to a switched biasing mode for suppression of noise signals. Finally, a resultant electronic signal is generated with a high gain after processing and suppression of the noise signals.

Abstract: A method and a system are disclosed for pixel-embedded signal amplification of a CMOS image sensor using multi-step voltage-gain enhancement. It involves activating a row of the CMOS image sensor by resetting switches SRST202, SH1201 and SH2 209 to charge nodes PD1, PD2, SD1, and SD2 to a pre-set voltage potential and VRST203. The CMOS sensor switches OFF SRST202, SH1201 and SH2 209 for integration of the charges at PD1 for producing a corresponding photo-generated signal. This signal is sampled by transferring to a gate of source follower SF1, to produce an amplified signal. It further involves double-sampling the amplified signal for removing any pixel-offset variation to produce a resultant signal. The said method is repeated for second row of CMOS image sensor for implementing additional gain on the resultant voltage signal, and the same is finally converted to digital bits to obtain an output signal of with enhanced gain.

Abstract: A method and a system are described for dynamic range enhancement in CMOS image sensors using charge-transfer amplification. The method involves resetting a pixel array and other nodes of the CMOS image sensor. It involves receiving light for a predetermined duration on the pixel array layered with photodiodes. It involves configuring an integration time of incident light at the photodiodes 104, for a desired exposure and releasing photoelectrons to form a current signal. An equivalent voltage signal is built allowing a voltage build-up by charging a storage capacitance, and thereafter adjusting the voltage build-up by adjusting a ratio between the storage capacitance and amplification capacitance. The voltage signal is then integrated with the current signal in order to obtain an integrated signal of amplified gain, and the method involves generating a resultant electronic signal with a higher amplification factor and an enhanced gain as compared to the input electronic signal.

Abstract: A method and a system are described for improving a dynamic range of a CMOS image sensor by pixel-embedded signal amplification. An electromagnetic radiation is incident for a predetermined duration on a pixel array including a plurality of photodiodes. The photodiodes release electrons in form of an input electronic signal and the released input signal is temporarily stored in a storage node. The said input signal is then transferred to a gate of an in-pixel amplifier, which is configured to dynamically alternate between modes of capacitance and switched biasing, using a single in-pixel switch. Then, the in-pixel amplifier is modulated while in capacitance mode for a voltage build-up and this augment gain of the input signal. Thereafter, the in-pixel amplifier alternates to a switched biasing mode for suppression of noise signals. Finally, a resultant electronic signal is generated with a high gain after processing and suppression of the noise signals.

Abstract: Examples of image sensors are described herein. In an example, an image sensor may comprise an array of hybrid pixels, where each hybrid pixel includes light sensing unit and a non-volatile memory component coupled to the light sensing unit. The light sensing unit comprises a light detecting element and a charge to voltage conversion unit. The charge to voltage conversion unit is to provide an output pixel signal (VPD), based on photo-electrons generated by the light detecting element. Further, the non-volatile component when calibrated to an initial resistance state is to compress the output pixel signal (VPD) during exposure.

Abstract: Examples of image sensors are described herein. In an example, an image sensor may comprise an array of hybrid pixels, where each hybrid pixel includes light sensing unit and a non-volatile memory component coupled to the light sensing unit. The light sensing unit comprises a light detecting element and a charge to voltage conversion unit. The charge to voltage conversion unit is to provide an output pixel signal (VPD), based on photo-electrons generated by the light detecting element. Further, the non-volatile component when calibrated to an initial resistance state is to compress the output pixel signal (VPD) during exposure.