Patents by Inventor Mukund Srinivasan

Mukund Srinivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual frequency plasma processor
    Publication number: 20030029567
    Abstract: A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.
    Type: Application
    Filed: December 31, 2001
    Publication date: February 13, 2003
    Inventors: Rajinder Dhindsa, Mukund Srinivasan, Eric Lenz, Lumin Li
  • Stepped upper electrode for plasma processing uniformity
    Publication number: 20020187647
    Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
    Type: Application
    Filed: May 7, 2002
    Publication date: December 12, 2002
    Inventors: Rajinder Dhindsa, Mukund Srinivasan, Aaron Eppler, Eric Lenz
  • Stepped upper electrode for plasma processing uniformity
    Patent number: 6391787
    Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: May 21, 2002
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Mukund Srinivasan, Aaron Eppler, Eric Lenz