Patents by Inventor Mukundan Narasimhan
Mukundan Narasimhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180358495Abstract: The present invention relates to dielectric coating formulation for solar module where a separate adhesive layer is not required for applying the formulation to the solar module. Preferably, the solar module is a light weight solar module.Type: ApplicationFiled: March 24, 2016Publication date: December 13, 2018Inventors: Arul SHANMUGASUNDRAM, Tapan Kumar ROUT, Mukundan NARASIMHAN, Prosenjit BOSE, Amresh MAHAJAN
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Publication number: 20140332371Abstract: A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.Type: ApplicationFiled: May 20, 2014Publication date: November 13, 2014Inventors: R. Ernest Demaray, Mukundan Narasimhan
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Patent number: 8728285Abstract: A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.Type: GrantFiled: May 20, 2004Date of Patent: May 20, 2014Assignee: Demaray, LLCInventors: Richard E. Demaray, Mukundan Narasimhan
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Patent number: 8105466Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.Type: GrantFiled: July 27, 2005Date of Patent: January 31, 2012Assignee: SpringWorks, LLCInventors: Hongmei Zhang, Mukundan Narasimhan, Ravi B. Mullapudi, Richard E. Demaray
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Patent number: 8076005Abstract: High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.Type: GrantFiled: March 22, 2007Date of Patent: December 13, 2011Assignee: SpringWorks, LLCInventors: Richard E. Demaray, Hong Mei Zhang, Mukundan Narasimhan, Vassiliki Milonopoulou
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Patent number: 8066840Abstract: A method of forming metallic connector patterns for solar cells, whereby an embosser having raised features shaped in the form of a metallic connector pattern is used to attach a portion of a metallic foil to a transparent conductive layer formed on a top transparent surface of a solar cell structure. The raised surfaces of the embosser press the metallic foil portion against the transparent conductive layer. Heat and pressure directed to the metallic foil portion attach the metallic foil portion to the underlying transparent conductive layer, and then the rest of the metallic foil, which is not attached to the transparent conductive layer, is removed.Type: GrantFiled: January 22, 2008Date of Patent: November 29, 2011Assignee: SoloPower, Inc.Inventors: Mukundan Narasimhan, Todd Johnson, Bulent M. Basol
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Publication number: 20100147364Abstract: The present invention provides module structures and methods of manufacturing rigid or flexible photovoltaic modules employing thin film solar cells fabricated on flexible substrates, preferably on flexible metallic foil substrates. The solar cells may be Group IBIIIAVIA compound solar cells or amorphous silicon solar cells fabricated on thin stainless steel or aluminum alloy foils. In one embodiment, initially a solar cell string including two or more solar cells is formed by interconnecting the solar cells with conductive leads or ribbons. At least one bypass diode electrically connects conductive back surfaces of at least two solar cells. The bypass diode and the solar cells are encapsulated with support material and are packed with the protective shell such that the at least one bypass diode is placed between at least one solar cell and the bottom protective sheet.Type: ApplicationFiled: December 16, 2009Publication date: June 17, 2010Applicant: SoloPower, Inc.Inventors: Pedro Gonzalez, Bulent M. Basol, Burak Metin, Mukundan Narasimhan, Mustafa Pinarbasi
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Publication number: 20090266398Abstract: An apparatus for and a method of interconnecting at least two solar cells using contact areas which are formed on the conductive substrates of the solar cells is described. The contact areas are formed by a material removal process which removes high resistance surface layers of the conductive substrates at the contact areas. A stringing process serially interconnects the solar cells by connecting each contact area that is cleared of high resistance surface layer to the terminal of one of the adjacent solar cells.Type: ApplicationFiled: April 28, 2008Publication date: October 29, 2009Inventors: Burak Metin, Mukundan Narasimhan, Mustafa Pinarbasi, Bulent M. Basol
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Patent number: 7544276Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.Type: GrantFiled: September 16, 2005Date of Patent: June 9, 2009Assignee: SpringWorks, LLCInventors: Hongmei Zhang, Mukundan Narasimhan, Ravi B. Mullapudi, Richard E. Demaray
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Patent number: 7413998Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.Type: GrantFiled: September 16, 2005Date of Patent: August 19, 2008Assignee: SpringWorks, LLCInventors: Hongmei Zhang, Mukundan Narasimhan, Ravi B. Mullapudi, Richard E. Demaray
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Publication number: 20080173390Abstract: A method of forming metallic connector patterns for solar cells, whereby an embosser having raised features shaped in the form of a metallic connector pattern is used to attach a portion of a metallic foil to a transparent conductive layer formed on a top transparent surface of a solar cell structure. The raised surfaces of the embosser press the metallic foil portion against the transparent conductive layer. Heat and pressure directed to the metallic foil portion attach the metallic foil portion to the underlying transparent conductive layer, and then the rest of the metallic foil, which is not attached to the transparent conductive layer, is removed.Type: ApplicationFiled: January 22, 2008Publication date: July 24, 2008Inventors: Mukundan Narasimhan, Todd Johnson, Bulent M. Basol
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Patent number: 7381657Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.Type: GrantFiled: October 1, 2004Date of Patent: June 3, 2008Assignee: SpringWorks, LLCInventors: Hongmei Zhang, Mukundan Narasimhan, Ravi B. Mullapudi, Richard E. Demaray
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Patent number: 7378356Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated processes performed on a reactor according to the present inention.Type: GrantFiled: March 16, 2002Date of Patent: May 27, 2008Assignee: SpringWorks, LLCInventors: Hongmei Zhang, Mukundan Narasimhan, Ravi B. Mullapudi, Richard E. Demaray
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Patent number: 7262131Abstract: In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.Type: GrantFiled: September 16, 2005Date of Patent: August 28, 2007Assignee: Symmorphix, Inc.Inventors: Mukundan Narasimhan, Peter Brooks, Richard E. Demaray
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Publication number: 20070187383Abstract: In accordance with one approach to the invention, elements and sub-elements of a conductive pattern on or in an optical member are designed and arranged to be predominantly or exclusively curved, so as to control the appearance of ray-like disturbances during nighttime point-source viewing situations. In another approach, the sub-elements of the conductive pattern are designed and arranged so as to be a large number of short, linear or curved elements oriented with a large angular distribution.Type: ApplicationFiled: January 19, 2007Publication date: August 16, 2007Inventors: Richard Wipfler, Mukundan Narasimhan
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Publication number: 20070172681Abstract: High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.Type: ApplicationFiled: March 22, 2007Publication date: July 26, 2007Inventors: Richard Demaray, Hong Zhang, Mukundan Narasimhan, Vassiliki Milonopoulou
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Patent number: 7238628Abstract: High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.Type: GrantFiled: May 20, 2004Date of Patent: July 3, 2007Assignee: Symmorphix, Inc.Inventors: Richard E. Demaray, Hong Mei Zhang, Mukundan Narasimhan, Vassiliki Milonopoulou
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Patent number: 7205662Abstract: In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.Type: GrantFiled: February 26, 2004Date of Patent: April 17, 2007Assignee: Symmorphix, Inc.Inventors: Mukundan Narasimhan, Peter Brooks, Richard E. Demaray
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Publication number: 20060071592Abstract: In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.Type: ApplicationFiled: September 16, 2005Publication date: April 6, 2006Inventors: Mukundan Narasimhan, Peter Brooks, Richard Demaray
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Publication number: 20060054496Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.Type: ApplicationFiled: September 16, 2005Publication date: March 16, 2006Inventors: Hongmei Zhang, Mukundan Narasimhan, Ravi Mullapudi, Richard Demaray