Patents by Inventor Mun-Do PARK

Mun-Do PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultraviolet light emitting diode and method of manufacturing the same
    Patent number: 10177284
    Abstract: A sidewall light emitting ultraviolet light emitting diode and a method of manufacturing thereof are disclosed. A light emitting structure is formed in an active region recessed from a substrate surface, and the light emitting structure is formed by growth in a direction parallel to the surface of the substrate. Also, a reflective metal layer is formed above or below the light emitting structure such that ultraviolet light can be released in a second direction perpendicular to a first direction which is the growth direction of the light emitting structure.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: January 8, 2019
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Dong-Seon Lee, Duk-Jo Kong, Jun-Yeob Lee, Mun-Do Park
  • ULTRAVIOLET LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20170309788
    Abstract: A sidewall light emitting ultraviolet light emitting diode and a method of manufacturing thereof are disclosed. A light emitting structure is formed in an active region recessed from a substrate surface, and the light emitting structure is formed by growth in a direction parallel to the surface of the substrate. Also, a reflective metal layer is formed above or below the light emitting structure such that ultraviolet light can be released in a second direction perpendicular to a first direction which is the growth direction of the light emitting structure.
    Type: Application
    Filed: April 24, 2017
    Publication date: October 26, 2017
    Inventors: Dong-Seon LEE, Duk-Jo KONG, Jun-Yeob LEE, Mun-Do PARK
  • Method for growing nitride-based semiconductor with high quality
    Patent number: 9455144
    Abstract: Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: September 27, 2016
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Dong-Seon Lee, Dong-Ju Seo, Jun-Youb Lee, Chang-Mo Kang, Won-Seok Seong, Mun-Do Park
  • METHOD FOR GROWING NITRIDE-BASED SEMICONDUCTOR WITH HIGH QUALITY
    Publication number: 20160093492
    Abstract: Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.
    Type: Application
    Filed: September 21, 2015
    Publication date: March 31, 2016
    Inventors: Dong-Seon LEE, Dong-Ju SEO, Jun-Youb LEE, Chang-Mo KANG, Won-Seok SEONG, Mun-Do PARK