Patents by Inventor Mun Hwan Kim
Mun Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10489598Abstract: A system for diagnosing and analyzing infrastructure, comprising: a storage unit storing a diagnostic script, which is for collecting system information from a target system or at least one target operating server of the target system; a script transmission unit transmitting the diagnostic script to the target system to diagnose the target system; a system information collection unit receiving the system information from the target system or the at least one target operating server as a result of the running of the diagnostic script; an analysis engine storage unit storing at least one analysis rule corresponding to the target system or the at least one target operating server; and an analysis information generation unit analyzing the system information by using the analysis rule, and generating analysis information regarding the target system and the at least one target operating server based on the results of the analyzing.Type: GrantFiled: March 2, 2017Date of Patent: November 26, 2019Assignee: SAMSUNG SDS CO., LTD.Inventors: In Chul Han, Seung Youl Maeng, Sung Hwan Choi, Min Ho Sung, Ji Yun Lee, Do San Pyun, Young Beom Seo, Seong Dae Song, Eun Young Kim, Sung Soon Hong, Jeong A Choi, Yoo Mi Kwon, Chang Won Park, Mun Hwan Kim
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Publication number: 20180137287Abstract: A system for diagnosing and analyzing infrastructure, comprising: a storage unit storing a diagnostic script, which is for collecting system information from a target system or at least one target operating server of the target system; a script transmission unit transmitting the diagnostic script to the target system to diagnose the target system; a system information collection unit receiving the system information from the target system or the at least one target operating server as a result of the running of the diagnostic script; an analysis engine storage unit storing at least one analysis rule corresponding to the target system or the at least one target operating server; and an analysis information generation unit analyzing the system information by using the analysis rule, and generating analysis information regarding the target system and the at least one target operating server based on the results of the analyzing.Type: ApplicationFiled: March 2, 2017Publication date: May 17, 2018Applicant: SAMSUNG SDS CO., LTD.Inventors: In Chul HAN, Seung Youl MAENG, Sung Hwan CHOI, Min Ho SUNG, Ji Yun LEE, Do San PYUN, Young Beom SEO, Seong Dae SONG, Eun Young KIM, Sung Soon HONG, Jeong A CHOI, Yoo Mi KWON, Chang Won PARK, Mun Hwan KIM
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Patent number: 9380242Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.Type: GrantFiled: September 25, 2014Date of Patent: June 28, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seoung Hyun Kim, Mun Hwan Kim, Chan Hyung Kim, Jung Bin Yun, Young Gu Jin, Seung Won Cha
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Publication number: 20150116565Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.Type: ApplicationFiled: September 25, 2014Publication date: April 30, 2015Inventors: Seoung Hyun KIM, Mun Hwan KIM, Chan Hyung KIM, Jung Bin YUN, Young Gu JIN, Seung Won CHA
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Patent number: 8278130Abstract: A back side illumination image sensor according to an embodiment includes: a device isolation region and a pixel region that are on a front side of a first substrate; a light sensor and a readout circuit that are on the pixel region; an interlayer dielectric layer and a metal line that are on the front side of the first substrate; a second substrate that is bonded to the front side of the first substrate on which the metal line is formed; a pixel isolating dielectric layer that is on the device isolation region at a back side of the first substrate; and a microlens that is on the light sensor at the back side of the first substrate.Type: GrantFiled: December 17, 2009Date of Patent: October 2, 2012Assignee: Dongbu Hitek Co., Ltd.Inventor: Mun Hwan Kim
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Patent number: 8193022Abstract: A back side illumination image sensor according to an embodiment includes: a photosensitive device and a readout circuit on the front side of a first substrate; an interlayer dielectric layer on the front side of the first substrate; a metal line on the interlayer dielectric layer; a pad having a step on the interlayer dielectric layer; and a second substrate bonded with the front side of the first substrate over the interlayer dielectric layer, metal line, and pad.Type: GrantFiled: December 17, 2009Date of Patent: June 5, 2012Assignee: Dongbu Hitek Co., Ltd.Inventor: Mun Hwan Kim
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Patent number: 8178381Abstract: Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of a first substrate; a photo detector and a readout circuitry on the pixel area; an interlayer dielectric layer and a metal line on the front side of the first substrate; a second substrate bonded to the front side of the first substrate formed with the metal line; a pixel division ion implantation layer on the isolation region at a back side of the first substrate; and a micro-lens on the photo detector at the back side of the first substrate.Type: GrantFiled: December 17, 2009Date of Patent: May 15, 2012Assignee: Dongbu Hitek Co., Ltd.Inventor: Mun Hwan Kim
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Patent number: 8114694Abstract: A method of manufacturing a back side illumination image sensor according to an embodiment includes: forming an ion implantation layer by implanting ions throughout the front side of a first substrate; defining a pixel region by forming a device isolation region on the front side of the first substrate; forming a photosensitive device and a readout circuit on the pixel region; forming an interlayer dielectric layer and a metal line on the front side of the first substrate; bonding a second substrate with the front side of the first substrate where the metal line is formed; removing a lower part of the first substrate under the ion implantation layer; applying wet etching to a back side of the first substrate after removing the lower part; and forming a microlens on the photosensitive device at the back side of the first substrate.Type: GrantFiled: December 17, 2009Date of Patent: February 14, 2012Assignee: Dongbu Hitek Co., Ltd.Inventor: Mun Hwan Kim
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Patent number: 8033513Abstract: A display device is disclosed. A display device includes a connecting block (40) rotatably fastened to an end of a stand assembly (20); a head mount (43) vertically movable with respect to the connecting block (40); and a locking unit that selectively locks the motion of the head mount (43) as the connecting block (40) rotates.Type: GrantFiled: May 22, 2007Date of Patent: October 11, 2011Assignee: LG Electronics Inc.Inventors: Woon Geun Jang, Mun Hwan Kim
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Patent number: 7985613Abstract: A method of manufacturing a back side illumination image sensor is provided. The method can include forming an ion implantation layer in a front side of a first substrate, forming a photodetector and a readout circuit on the first substrate, forming an interlayer dielectric layer and a metal line on the front side of the first substrate, bonding a second substrate with the front side of the first substrate, removing a lower portion of the first substrate on the basis of the ion implantation layer, performing an annealing process with respect on a back side of the first substrate, and forming a microlens over the photodetector.Type: GrantFiled: December 18, 2009Date of Patent: July 26, 2011Assignee: Dongbu Hitek Co., Ltd.Inventor: Mun Hwan Kim
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Publication number: 20100164035Abstract: A back side illumination image sensor according to an embodiment includes: a device isolation region and a pixel region that are on a front side of a first substrate; a light sensor and a readout circuit that are on the pixel region; an interlayer dielectric layer and a metal line that are on the front side of the first substrate; a second substrate that is bonded to the front side of the first substrate on which the metal line is formed; a pixel isolating dielectric layer that is on the device isolation region at a back side of the first substrate; and a microlens that is on the light sensor at the back side of the first substrateType: ApplicationFiled: December 17, 2009Publication date: July 1, 2010Inventor: MUN HWAN KIM
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Publication number: 20100167447Abstract: A method of manufacturing a back side illumination image sensor according to an embodiment includes: forming an ion implantation layer by implanting ions throughout the front side of a first substrate; defining a pixel region by forming a device isolation region on the front side of the first substrate; forming a photosensitive device and a readout circuit on the pixel region; forming an interlayer dielectric layer and a metal line on the front side of the first substrate; bonding a second substrate with the front side of the first substrate where the metal line is formed; removing a lower part of the first substrate under the ion implantation layer; applying wet etching to a back side of the first substrate after removing the lower part; and forming a microlens on the photosensitive device at the back side of the first substrate.Type: ApplicationFiled: December 17, 2009Publication date: July 1, 2010Inventor: MUN HWAN KIM
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Publication number: 20100164036Abstract: Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of a first substrate; a photo detector and a readout circuitry on the pixel area; an interlayer dielectric layer and a metal line on the front side of the first substrate; a second substrate bonded to the front side of the first substrate formed with the metal line; a pixel division ion implantation layer on the isolation region at a back side of the first substrate; and a micro-lens on the photo detector at the back side of the first substrate.Type: ApplicationFiled: December 17, 2009Publication date: July 1, 2010Inventor: MUN HWAN KIM
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Publication number: 20100164041Abstract: A back side illumination image sensor according to an embodiment includes: a photosensitive device and a readout circuit on the front side of a first substrate; an interlayer dielectric layer on the front side of the first substrate; a metal line on the interlayer dielectric layer; a pad having a step on the interlayer dielectric layer; and a second substrate bonded with the front side of the first substrate over the interlayer dielectric layer, metal line, and pad.Type: ApplicationFiled: December 17, 2009Publication date: July 1, 2010Inventor: MUN HWAN KIM
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Publication number: 20100167452Abstract: A method of manufacturing a back side illumination image sensor is provided. The method can include forming an ion implantation layer in a front side of a first substrate, forming a photodetector and a readout circuit on the first substrate, forming an interlayer dielectric layer and a metal line on the front side of the first substrate, bonding a second substrate with the front side of the first substrate, removing a lower portion of the first substrate on the basis of the ion implantation layer, performing an annealing process with respect on a back side of the first substrate, and forming a microlens over the photodetector.Type: ApplicationFiled: December 18, 2009Publication date: July 1, 2010Inventor: Mun Hwan Kim
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Publication number: 20100032532Abstract: A display device is disclosed. A display device includes a connecting block (40) rotatably fastened to an end of a stand assembly (20); a head mount (43) vertically movable with respect to the connecting block (40); and a locking unit that selectively locks the motion of the head mount (43) as the connecting block (40) rotates.Type: ApplicationFiled: May 22, 2007Publication date: February 11, 2010Inventors: Woon Geun Jang, Mun Hwan Kim
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Patent number: 7578490Abstract: There is provided a stand of a display device for allowing more convenient adjustment of the display device to various positions. The stand includes a base unit, a supporting unit formed on a rear surface of the display device, a first two-link hinge unit, and a second two-link hinge unit. The first two-link hinge unit is provided between the base unit and the supporting unit for allowing revolution of the display device around an imaginary axis perpendicular to the display device. The second two-link hinge unit is provided between the base unit and the supporting unit for allowing revolution of the display device around an imaginary axis defined in a horizontal direction of display device.Type: GrantFiled: July 26, 2006Date of Patent: August 25, 2009Assignee: LG Electronics Inc.Inventor: Mun Hwan Kim
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Patent number: 7490796Abstract: A mount for an image display apparatus allows a viewing angle, height, and aspect ratio of the image display apparatus to be adjusted. The mount includes a base, a support member disposed vertically with respect to the base, and an elevator which moves up and down within the support member. An upper bracket is engaged with the elevator, and a pivot bracket is engaged with a rear surface of the image display apparatus and rotates about a pivot shaft of the upper bracket. Rotation of the bracket causes an activation bar to move up and down, for forcing a holder into a fixed position or a released position the holder from. The holder prevents rotation of the display if the display is not already positioned at its upper position. The holder also prevents downward movement of the display if the display has been rotated.Type: GrantFiled: June 22, 2005Date of Patent: February 17, 2009Assignee: LG Electronics Inc.Inventor: Mun Hwan Kim