Abstract: A laser irradiation device includes an optical system including a light source emitting a laser, a pattern mask including a plurality of patterns on which the laser emitted from the optical system is incident and through which the laser passes, and a moving module moving the pattern mask in a direction perpendicular to the substrate while irradiating the metal layer with the laser to control an area in which the metal layer is irradiated with the laser. The plurality of pad electrodes and the plurality of bump electrodes are electrically connected through the plurality of metal patterns.

Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Abstract: A method includes forming a planarization layer to a position below an upper transistor device region of a base structure of an electronic device and above a lower transistor device region of the base structure. The base structure includes a plurality of features. The method further includes forming spacer material along the base structure and the planarization layer, modifying the spacer material formed along bottom trenches of the base structure to obtain modified spacer material, and forming a spacer layer by using a wet etch process to remove the modified spacer material. Modifying the spacer material formed along the bottom trenches of the base structure to obtain the modified spacer material includes performing a dry etch process targeting the spacer material formed along the bottom trenches of the base structure.

Abstract: There is provided a chemical supply device for use in a semiconductor manufacturing process, the chemical supply device including a bubbler, wherein the bubbler includes: a lower support surface including a lower concave portion; a side surface smoothly connected to the lower support surface through a corner curved portion; an upper surface extended from the side surface; an inlet extended from an outside of the upper surface to an inside of the bubbler, and configured to inject an output gas for causing a chemical solution contained in the bubbler to evaporate; and an outlet configured to transmit the chemical salutation evaporated in the bubbler, wherein a radius of curvature of the upper surface is greater than or equal to 45% and less than 58% of a diameter of the lower support surface.

Abstract: According to one embodiment, a chemical supply device includes: a bubbler configured to contain a chemical solution which is used in a semiconductor process and to receive an input gas for vaporizing the chemical solution into an output gas; a constant-temperature bath configured to contain the bubbler and to adjust a temperature of the chemical solution; a valve module fluidically connected with the bubbler and configured to provide channels for the chemical solution, the input gas, and the output gas; a level sensor configured to detect a remaining level of the chemical solution; a controller; and a memory configured to store a program for operating the controller, and the controller is configured to determine a target flow rate of the input gas to cause a flow rate of the output gas to have a designated flow rate, based on the remaining level of the chemical solution.

Abstract: According to to various embodiments, there is provided a chemical supply device for use in a semiconductor manufacturing process, the chemical supply device including: a bubbler configured to contain a chemical solution to be used in a semiconductor manufacturing process and to evaporate the chemical solution; a constant temperature bath configured to accommodate the bubbler and to adjust a temperature of the chemical solution; and a heat transferring structure configured to enhance temperature adjustment efficiency of the chemical solution, wherein the heat transferring structure includes: a constant temperature cup configured to provide an accommodation space to have the bubbler seated therein; a heat transferring member disposed between a side surface area of the bubbler.

Abstract: Embodiments of the present disclosure relate to methods for patterning a material layer on a substrate. The method includes forming a hard mask layer on a material layer disposed on a substrate. The material layer includes a plurality of first layers and a plurality of second layers alternately formed over the substrate. The method further includes performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas; performing an oxidation process to oxidize a sidewall of the features by supplying an oxidation gas; and performing a second etch process to etch the sidewall of the features formed in the material layer by suppling a second etching gas.

Abstract: Proposed is a large displacement precision positioning adjustment apparatus including a mirror at an upper end, a fixed plate at a lower portion, linear driving parts including a linear driver performing a large displacement fine operation and a movement supporting part including a guide guiding a movement direction and a fixing part fixing the driver. The linear driver includes a first rotation driving part performing a large displacement movement, a third rotation driving part, a second rotation driving part performing a fine movement, and a moving shaft. The linear driving part includes an upper end connection part connecting an upper end of the linear driving part to the mirror, and a lower end connection part connecting a lower end of the linear driving part and the fixed plate, a first controller controlling a position of the linear driving part, and a second controller controlling a position of the mirror.

Abstract: Pharmaceutical compositions and methods of using maleate salts of triazolopyrazine derivatives are provided. In some aspects, the pharmaceutical compositions have improved storage stability and pharmacokinetic properties. The maleate salts of triazolopyrazine derivatives bind competitively to the phosphorylation site of c-MET kinase and can be used for the treatment or prevention of various hyper proliferative disorders.

Abstract: A device for unidirectional propagation of microwaves comprises a resonant microwave structure arranged to transmit microwaves between two ports and a magnetic source arranged to provide a generally static magnetic field and to have a resonant frequency distinct from that of the microwave structure, which is disposed adjacent the microwave structure so as to be located in presence of electromagnetic fields emanating from the transmitted microwaves such that the magnetic field interacts with the electromagnetic fields of the microwaves so as to form a set of hybridized resonant frequencies at which zero intrinsic damping exists, one of the set of hybridized resonant frequencies being a real eigenvalue providing the unidirectional propagation from one of the first and second ports to the other. A related method comprises arranging the magnetic source at a prescribed position where the real eigenvalue matches the frequency of an input signal applied at a selected port.

Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: The present application relates to a tablet formulation composition comprising granules prepared from a triazolopyrazine derivative represented by formula 1 as a drug substance, an excipient, a binder and a disintegrant, and, more particularly, is an invention that solves problems in drug production caused by poor flowability and tabletability of the triazolopyrazine derivative represented by formula 1, and relates to a tablet formulation composition with improved stability formed by comprising mannitol as an excipient and low-substituted hydroxypropyl cellulose as a binder, and a method for preparing the same.

Abstract: Provided is a pharmaceutical composition for treating a degenerative brain disease, comprising pluripotent stem cells-derived neural precursor cells. By injecting the neural precursor cells differentiated from pluripotent stem cells to an amyloid beta-injected animal model through an intracerebroventricular route, the effect of strengthening cognitive function can be sustained for a long period of time, and thus, the neural precursor cells may be effectively used for treatment of degenerative brain diseases including Alzheimer's disease.

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Abstract: Disclosed herein are an apparatus and method for providing game replays. The apparatus for providing game replays includes: storage configured to store a game log for each game round of a game match including a plurality of game rounds that are performed sequentially; a controller configured to run the game round by providing a game screen of a three-dimensional game space to a plurality of players participating in the game match and also receiving control commands for characters from the plurality of players, and to, when the game round ends, generate a replay image showing changes in the location of a character corresponding to each of the plurality of players on a two-dimensional plan view of the three-dimensional game space based on the game log of the game round; and an input/output interface configured to provide the replay image to the plurality of players.

Abstract: Disclosed herein are an apparatus and method for providing game maps. The apparatus for providing game maps includes memory configured to store maps for the play of a blast mission game, and a controller configured to provide a map including varied game play environment information for each round of the blast mission game.

Abstract: A method and system for continuously measuring animal body temperature are disclosed. The system includes: an external device for transmitting wireless power into an animal's body from outside the animal's body; and an implant device inserted into the animal's body, that periodically measures the animal's body temperature by a temperature sensor by using battery power and stores continuous body temperature information in storage, and that, when wireless power is received from the external device, sends the continuous body temperature information stored in the storage to the external device by using the received wireless power.