Abstract: An integrated circuit (IC) includes a substrate having a device layer and a plurality of metal layers formed thereon. The plurality of metal layers include patterned upper metal layers and lower metal layers, a multi-level metal interconnect structure formed using the plurality of metal layers, where the interconnect structure is in electrical contact with a first portion and second portion of the device layer. At least one circuit editing structure including a first and second columns are formed using at least a portion of the plurality of metal layers, the first column being in electrical contact with the first portion of the device layer and the second column being in electrical contact with second portion of the device layer, where a portion of the first and second columns define a circuit editing feature operable to electrically couple or decouple the columns using focused ion beam (FIB) processing.

Abstract: An integrated circuit (IC) includes a substrate having a device layer and a plurality of metal layers formed thereon. The plurality of metal layers include patterned upper metal layers and lower metal layers, a multi-level metal interconnect structure formed using the plurality of metal layers, where the interconnect structure is in electrical contact with a first portion and second portion of the device layer. At least one circuit editing structure including a first and second columns are formed using at least a portion of the plurality of metal layers, the first column being in electrical contact with the first portion of the device layer and the second column being in electrical contact with second portion of the device layer, where a portion of the first and second columns define a circuit editing feature operable to electrically couple or decouple the columns using focused ion beam (FIB) processing.

Abstract: A method of packaging a die includes attaching the die to a substrate; underfilling the space between the die and the substrate with a first material, and placing a second material in contact with at least a portion of the die and the substrate after underfilling the space between the die and substrate with the first material. A system includes a semiconductor package having a substrate, a die attached to the substrate, an underfill material positioned between the die and the substrate, and a molding material in contact with at least a portion of the substrate and the die. A heat sink is also in thermal contact with the semiconductor package.

Abstract: A method of packaging a die includes attaching the die to a substrate; underfilling the space between the die and the substrate with a first material, and placing a second material in contact with at least a portion of the die and the substrate after underfilling the space between the die and substrate with the first material. A system includes a semiconductor package having a substrate, a die attached to the substrate, an underfill material positioned between the die and the substrate, and a molding material in contact with at least a portion of the substrate and the die. A heat sink is also in thermal contact with the semiconductor package.