Abstract: In a display apparatus, a light generating part generates a first light in response to a driving signal, and a first driving part outputs a panel driving signal. A display panel receives the first light from the light generating part and a second light externally provided, and displays an image in response to the panel driving signal. A light sensing part is disposed in the display panel so as to output a sensing signal corresponding a light amount of the second light. A second driving part compares the sensing signal with a predetermined reference value, and outputs a driving signal in accordance with the compared result. Thus, the display apparatus may reduce an electrical power consumed to drive the display apparatus.

Abstract: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode.

Abstract: A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.

Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.

Abstract: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

Abstract: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

Abstract: First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads.

Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

Abstract: An electrophoretic display (EPD) shows a high contrast and a color display. The EPD blocks a channel of a thin film transistor from an incident light in order to prevent a current leakage. The color display may also include a white, black, red, green, blue, yellow, cyan, magenta or other color pigment in a micro-capsule.

Abstract: A liquid crystal display includes a common electrode panel having a first substrate, a color filter formed on the substrate and having a light hole, a common electrode formed on the color filter and into the light hole, a first insulating film formed on the common electrode and formed into the light hole, a thin film transistor (TFT) panel facing the common electrode panel, and a liquid crystal layer interposed between the common electrode panel and the TFT panel. The TFT panel includes a second substrate, a transmissive electrode formed on the second substrate, and a reflective electrode formed on the second substrate and connected to the transmissive electrode.

Abstract: A gate wire including a gate line and a gate electrode is formed on a substrate and a gate insulating layer is formed on the substrate. A semiconductor pattern and an etching assistant pattern are formed on the gate insulating layer and a source/drain conductor pattern and an etching assistant layer are formed on the semiconductor pattern and the etching assistant pattern. A data wire including a data line and source and drain electrodes separated from each other is formed by removing the etching assistant layer and partly removing the source/drain conductor pattern. A pixel electrode connected to the drain electrodes is formed.

Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

Abstract: A display device capable of minimizing leakage of a voltage applied to a storage line, comprising an insulating substrate; a first metal wiring layer which is formed on the insulating substrate; a storage line which is isolated from the first metal wiring layer and formed along the first metal wiring layer; a first insulating film which covers the first metal wiring layer and the storage line; a second metal wiring layer which is formed on the first insulating film and comprises a storage capacity forming layer corresponding to the storage line; a second insulating film which covers the second metal wiring layer and comprises a pixel contact hole exposing a portion of the storage capacity forming layer; and a pixel electrode which is formed on the second insulating film and connected to the storage capacity forming layer via the pixel contact hole.

Abstract: A data processor receives sets of input image data having respective input grays and outputs sets of output image data having respective output grays. Each set of output image data corresponds to one of the plurality of sets of input image data and have more image data than each set of the input image data. A data driver supplies the pixels with data voltages corresponding to the output image data supplied from the data processor. A set of output grays corresponding to a set of input grays are selected from sets of grays, each set of grays giving an average front transmittance substantially equal to an average front transmittance of the set of input grays. The sets of output grays generate the closest average lateral gamma curve generated by the sets of grays relative to an average front gamma curve generated by the input grays.

Abstract: A thin film transistor array panel according to the present invention includes: an insulating substrate; a gate wire formed on the insulating substrate and including a plurality of gate portions and a gate connection connecting the gate portions; a data wire insulated from the gate wire and intersecting the date wire; a thin film transistor connected to the gate wire and the data wire; and a pixel electrode connected to the thin film transitor.

Abstract: A method for fabricating a flat panel display, comprising preparing an insulating substrate; forming separated source and drain electrodes on the insulating substrate to define a channel region; forming a first passivation layer on the source and drain electrodes; forming a metal layer having an opening corresponding to the channel region on the first passivation layer; forming a deposition opening in the passivation layer by using the metal layer as a mask to expose the channel region; forming an organic semiconductor layer and a second passivation layer, in turn, in the deposition opening and on the metal layer; and removing the metal layer, the organic semiconductor layer and the second passivation layer while allowing the layers formed in the deposition opening to remain.

Abstract: Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched.

Abstract: A semi-transmission liquid crystal display comprising a liquid crystal panel; a backlight unit to emit light to the liquid crystal panel; and a data driver to apply a data voltage to a data line of the liquid crystal panel; wherein, the liquid crystal panel comprises a TFT substrate which has a transmission area transmitting light from the backlight unit and a reflection area reflecting light from exterior, a color filter substrate which has color filter layer having a concave area which is formed corresponding to the reflection area, and a liquid crystal layer which is sandwiched between the TFT substrate and the color filter substrate and having varying thickness according to the concave area; and the data driver applies the data voltage to the data line in the liquid crystal panel by a transmission voltage mode when the backlight unit is on and by a reflection voltage mode when the backlight unit is off, which configuration provides a semi-transmission LCD having good display quality without an overcoat la

Abstract: The invention provides a flat panel display having an insulating substrate; a data line formed on the insulating substrate; an interlayer insulating film formed on the data line having a first contact opening exposing the data line; a connecting member formed in a part of the first contact opening; an interlayer insulating film around the first contact opening; a gate insulating film formed on the connecting member having a second contact opening exposing the connecting member; and an organic semiconductor layer formed on the gate insulating film.

Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.