Abstract: To prevent a liquid material outlet from being clogged with accretion. Disclosed is a vaporizer, which vaporizes a liquid material, discharged from the outlet of a nozzle, in a heated vaporization chamber to produce a raw gas, and which is provided with a cylindrical heated member, which is disposed between the front end of the nozzle and the vaporization chamber so as to cover the perimeter of the outlet, a carrier gas ejection port, which ejects a carrier gas from the vicinity of the outlet, a mixing chamber, wherein the liquid material discharged from the outlet is mixed with the carrier gas, which ejects the mixture toward the vaporization chamber, a first heating part, which heats the vaporization chamber from its exterior, and a second heating part, which heats the heated member from its exterior.

Abstract: A vaporizer having a simple structure with improved thermal efficiency is provided. A vaporizer includes a nozzle unit for jetting a liquid material in a mist state, a vaporizing unit having vaporizing paths which vaporize the material mist and form a material gas, and an ejection unit for sending the material gas to the subsequent stage. The vaporizing unit includes a vaporizing unit main body having the vaporizing paths, a main body container containing the vaporizing unit main body, a heater for heating the material mist passing through the vaporizing paths, and connecting members arranged on both end sections of the main body container. The vaporizing unit main body and the main body container are formed of a material having thermal conductivity higher than that of the material of the connecting members. The end sections of the main body container and the connecting members are bonded by explosion bonding.

Abstract: A substrate processing method using a substrate processing apparatus including: a process container holding a substrate to be processed therein; first gas supplying means having flow rate adjusting means for supplying a first process gas to the process container; and second gas supplying means supplying a second process gas to the process container, the substrate processing method including: a first step of controlling a flow rate of the first process gas to be a first flow rate by the flow rate adjusting means and supplying the first process gas in a first direction; a second step of discharging the first process gas from the process container; a third step of supplying the second process gas to the process container; and a fourth step of discharging the second process gas from the process container, in a repeated manner, wherein a step of stabilizing the flow rate of the process gas is set between a primary first step and a secondary first step performed subsequently to the primary first step.

Abstract: A substrate processing method using a substrate processing apparatus including: a process container holding a substrate to be processed therein; first gas supplying means having flow rate adjusting means for supplying a first process gas to the process container; and second gas supplying means supplying a second process gas to the process container, the substrate processing method including: a first step of controlling a flow rate of the first process gas to be a first flow rate by the flow rate adjusting means and supplying the first process gas in a first direction; a second step of discharging the first process gas from the process container; a third step of supplying the second process gas to the process container; and a fourth step of discharging the second process gas from the process container, in a repeated manner, wherein a step of stabilizing the flow rate of the process gas is set between a primary first step and a secondary first step performed subsequently to the primary first step.

Abstract: A film forming apparatus according to the present invention has a source material supply section, a vaporizer, and a film forming chamber. The vaporizer comprises a nozzle which spays the liquid material supplied from the source material supply section, a vaporization chamber which has one end in which the nozzle opens and a closed other end and in which the misty liquid material sprayed through the nozzle is vaporized to generate the material gas, a heater which heats the vaporization chamber, and an outlet port which opens in the vaporization chamber in the vicinity of the nozzle and through which the material gas is discharged from the vaporization chamber. The closed other end of the vaporization chamber is kept at a long enough distance from the nozzle to allow the liquid source material injected through the nozzle to vaporize.

Abstract: A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.

Abstract: A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.

Abstract: A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.