Patents by Inventor Munehisa Watanabe

Munehisa Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11509280
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: November 22, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Patent number: 11469736
    Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: October 11, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Harunobu Horikawa
  • Publication number: 20220123711
    Abstract: An acoustic wave device includes a silicon substrate, a piezoelectric layer, and an IDT electrode. Each of the silicon substrate and the piezoelectric layer includes first and second opposed main surfaces. The IDT electrode is on the first main surface of the piezoelectric layer, and includes first and second electrode fingers. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is denoted as ?, a distance between the first main surface of the silicon substrate and the second main surface of the piezoelectric layer in a thickness direction of the silicon substrate is less than about 0.84?. The first main surface of the silicon substrate is rougher than the first main surface of the piezoelectric layer.
    Type: Application
    Filed: December 30, 2021
    Publication date: April 21, 2022
    Inventors: Yasumasa TANIGUCHI, Takuro OKADA, Munehisa WATANABE
  • Publication number: 20200204146
    Abstract: An acoustic wave device includes a support substrate, a piezoelectric body layer, an interdigital transducer electrode, and an external connection electrode. The piezoelectric body layer is on the support substrate. The interdigital transducer electrode is on the piezoelectric body layer. The external connection electrode is electrically connected to the interdigital transducer electrode. The external connection electrode does not overlap the piezoelectric body layer in a plan view from a thickness direction of the support substrate. The support substrate includes a hollow portion. The hollow portion is at least on an end portion of the support substrate in a plan view from the thickness direction.
    Type: Application
    Filed: December 16, 2019
    Publication date: June 25, 2020
    Inventors: Munehisa WATANABE, Hideki IWAMOTO
  • Publication number: 20200091892
    Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.
    Type: Application
    Filed: November 18, 2019
    Publication date: March 19, 2020
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Harunobu HORIKAWA
  • Publication number: 20200083859
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: November 12, 2019
    Publication date: March 12, 2020
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO
  • Patent number: 10511279
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: December 17, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Patent number: 10243536
    Abstract: In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: March 26, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Shin Saijo, Hisashi Yamazaki, Koji Yamamoto, Seiji Kai, Munehisa Watanabe
  • Patent number: 9831848
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: November 28, 2017
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Publication number: 20170331449
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: August 2, 2017
    Publication date: November 16, 2017
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO
  • Patent number: 9748923
    Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (?, ?, ?) of the LiTaO3 fall within specific ranges.
    Type: Grant
    Filed: May 23, 2013
    Date of Patent: August 29, 2017
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hajime Kando, Syunsuke Kido, Keiji Okada, Munehisa Watanabe
  • Publication number: 20160329876
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: July 18, 2016
    Publication date: November 10, 2016
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO
  • Patent number: 9484885
    Abstract: A method for manufacturing an elastic wave device includes a step of preparing a supporting substrate, a step of forming a high-acoustic-velocity film on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a step of forming a low-acoustic-velocity film on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, a step of forming the piezoelectric film on the low-acoustic-velocity film, and a step of forming an IDT electrode on a surface of the piezoelectric film.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: November 1, 2016
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Publication number: 20160294354
    Abstract: In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.
    Type: Application
    Filed: June 13, 2016
    Publication date: October 6, 2016
    Inventors: Shin SAIJO, Hisashi YAMAZAKI, Koji YAMAMOTO, Seiji KAI, Munehisa WATANABE
  • Patent number: 9431996
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: August 30, 2016
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Publication number: 20150033521
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: September 17, 2014
    Publication date: February 5, 2015
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO
  • Patent number: 8947315
    Abstract: An antenna that resonates at each of at least operating two frequency bands includes a first LC parallel circuit having a first impedance between a feeding element and a feeding circuit, and a second LC parallel circuit having a second impedance between a parasitic element and ground. The feeding element and the parasitic element are configured such that multiple resonant frequencies are positioned between the two operating frequency bands in a case where the impedances of the first and second LC parallel circuits are set to 0, and the LC parallel circuits having the first and second impedances cause the multiple resonance frequencies to shift to an operating frequency band on the lower frequency side and to the higher frequency side, of the two operating frequency bands.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: February 3, 2015
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Kengo Onaka, Tsuyoshi Mukai, Munehisa Watanabe
  • Publication number: 20140152145
    Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (?, ?, ?) of the LiTaO3 fall within specific ranges.
    Type: Application
    Filed: May 23, 2013
    Publication date: June 5, 2014
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Hajime KANDO, Syunsuke KIDO, Keiji OKADA, Munehisa WATANABE
  • Patent number: 8654013
    Abstract: An antenna includes a base, a first radiating element, and second radiating element. The first radiating element is open at a first end thereof, is connected to a ground point at a second end thereof, and resonates in a substantially ¼ wavelength mode in a first communication frequency band. A feed line is connected between a first feed point and a predetermined position between the first end and the second end of the first radiating element. The second radiating element has a first end that is a second feed point, a second end that is connected to the ground point, and resonates in a substantially ½ wavelength mode in a second communication frequency band. A distance from the ground point to the second feed point is longer than a distance from the ground point to the first feed point.
    Type: Grant
    Filed: July 13, 2010
    Date of Patent: February 18, 2014
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Munehisa Watanabe, Kengo Onaka, Takashi Ishihara, Tsuyoshi Mukai, Yuichi Kushihi
  • Publication number: 20130285768
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: June 18, 2013
    Publication date: October 31, 2013
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO