Abstract: A method of mounting a semiconductor device including a film carrier having an insulating film having on one side thereof a connecting lead and a semiconductor element junctioned with the film carrier on an outer substrate, which includes forming an opening for adhesive forcing or adhesive injection in the insulating film within its bonding area to be in contact with a land part on the outer substrate and in an area near the bonding area, connecting the connecting lead to the land part on the outer substrate, and forcing or injecting an adhesive through the opening formed in the insulating film into the space between the film carrier and the outer substrate.

Abstract: A flexible printed substrate imparted with an adhesive property for loading on an external substrate, a double printed substrate having formed on both surfaces thereof a metal layer or a wiring circuit, and a multilayer substrate having a multilayer structure are disclosed. The flexible printed substrate comprises an insulating resin layer comprising a low-linear expansion polyimide resin layer and a thermoplastic polyimide resin layer, and a metal layer or a wiring circuit formed on the low-linear expansion polyimide resin layer of the insulating resin layer, wherein a mixed region of the polyimide resin components is formed in the interface between the low-linear expansion polyimide resin layer and the thermoplastic polyimide resin layer.

Abstract: A wiring substrate, a film carrier, a semiconductor device made by using the film carrier, and a mounting structure comprising the semiconductor device are disclosed.The wiring substrate comprises:a conductor pattern which has a bonding pad and is formed on the rear surface of an insulating support;at least one of minute through-holes which are provided in a region of the insulating support where the bonding pad is in contact therewith, or which are provided a region of the insulating support where the bonding pad is in contact therewith and in the vicinity of the region, the through-holes running in the direction of the thickness of the insulating support;a conductive passage which is made of a metal material and which is formed in the through-holes that are provided in a region of the insulating support where the bonding pad is in contact therewith; anda bump-like metal protrusion which is formed on the conductive passage and which is protruded from the front surface of the insulating support.

Abstract: A process for producing a polyimide precursor having excellent adhesion property and improved moisture resistance by polymerization of an organic tetracarboxylic acid component and a diamine is disclosed. A portion of the organic tetracarboxylic acid is reacted with an aminosilane compound in which H in an amino group is substituted with a monovalent organic group containing a hydrophobic aromatic ring, to produce a silane-modified polycarboxylic acid component and the resulting silane-modified polycarboxylic acid component is polymerized with a diamine together with the residual organic tetracarboxylic acid component.