Patents by Inventor Muneki Hamashima

Muneki Hamashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090050822
    Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
    Type: Application
    Filed: June 25, 2007
    Publication date: February 26, 2009
    Applicant: EBARA CORPORATION
    Inventors: Mamoru Nakasuji, Tohru Satake, Kenji Watanabe, Takeshi Murakami, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi, Naoto Kihara, Hiroshi Nishimura
  • Publication number: 20090039262
    Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
    Type: Application
    Filed: August 8, 2008
    Publication date: February 12, 2009
    Applicant: EBARA CORPORATION
    Inventors: Mamoru NAKASUJI, Nobuharu NOJI, Tohru SATAKE, Masahiro HATAKEYAMA, Kenji WATANABE, Takao KATO, Hirosi SOBUKAWA, Tsutomu KARIMATA, Shoji YOSHIKAWA, Toshifumi KIMBA, Shin OOWADA, Mutsumi SAITO, Muneki HAMASHIMA
  • Patent number: 7439502
    Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.
    Type: Grant
    Filed: June 11, 2007
    Date of Patent: October 21, 2008
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
  • Patent number: 7423267
    Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: September 9, 2008
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Kenji Watanabe, Takao Kato, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima
  • Publication number: 20080173815
    Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.
    Type: Application
    Filed: February 8, 2008
    Publication date: July 24, 2008
    Applicant: Ebara Corporation
    Inventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
  • Publication number: 20080121804
    Abstract: The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate.
    Type: Application
    Filed: December 10, 2007
    Publication date: May 29, 2008
    Applicant: EBARA CORPORATION
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Masahiro Hatakeyama, Kenji Watanabe, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Shin Oowada, Mutsumi Saito, Muneki Hamashima
  • Publication number: 20080042060
    Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
    Type: Application
    Filed: October 9, 2007
    Publication date: February 21, 2008
    Applicant: EBARA CORPORATION
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi
  • Publication number: 20070272859
    Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc.. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.
    Type: Application
    Filed: June 11, 2007
    Publication date: November 29, 2007
    Applicant: Ebara Corporation
    Inventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
  • Patent number: 7297949
    Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: November 20, 2007
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi
  • Patent number: 7247848
    Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
    Type: Grant
    Filed: May 28, 2003
    Date of Patent: July 24, 2007
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Tohru Satake, Kenji Watanabe, Takeshi Murakami, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi, Naoto Kihara, Hiroshi Nishimura
  • Publication number: 20070164226
    Abstract: An electron beam apparatus including an electron gun for directing a plurality of primary electron beams onto a sample, an objective lens for forming an electric filed to accelerate a plurality of secondary electron beams emitted from the sample, and a separator for separating the plurality of secondary electron beams from a primary optical system and for directing the plurality of secondary electron beams into a secondary optical system for guiding to a detector outputting a detection signal of the secondary electron beams. A deflector deflects the secondary electron beams in the secondary optical system. The deflector is controlled to deflect the plurality of secondary electron beams synchronously with scanning of the plurality of primary electron beams, thereby preventing the plurality of secondary electron beams from moving on the detector in response to the scanning of the plurality of primary electron beams.
    Type: Application
    Filed: March 7, 2007
    Publication date: July 19, 2007
    Applicant: NIKON CORPORATION
    Inventors: Muneki Hamashima, Takao Kato, Mamoru Nakasuji, Nobuharu Noji, Tohru Satake
  • Patent number: 7244932
    Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: July 17, 2007
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
  • Patent number: 7205559
    Abstract: An electron beam apparatus including an electron gun for directing a plurality of primary electron beams onto a sample, an objective lens for forming an electric field to accelerate a plurality of secondary electron beams emitted from the sample, and a separator for separating the plurality of secondary electron beams from a primary optical system and for directing the plurality of secondary electron beams into a secondary optical system for guiding to a detector outputting a detection signal of the secondary electron beams. A deflector deflects the secondary electron beams in the secondary optical system. The deflector is controlled to deflect the plurality of secondary electron beams synchronously with scanning of the plurality of primary electron beams, thereby preventing the plurality of secondary electron beams from moving on the detector in response to the scanning of the plurality of primary electron beams.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: April 17, 2007
    Assignee: Ebara Corporation
    Inventors: Muneki Hamashima, Takao Kato, Mamoru Nakasuji, Nobuharu Noji, Tohru Satake
  • Publication number: 20070057186
    Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
    Type: Application
    Filed: September 28, 2006
    Publication date: March 15, 2007
    Applicant: EBARA CORPORATION
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi
  • Publication number: 20070045536
    Abstract: The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate.
    Type: Application
    Filed: February 9, 2006
    Publication date: March 1, 2007
    Applicant: EBARA Corporation
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Masahiro Hatakeyama, Kenji Watanabe, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Shin Oowada, Mutsumi Saito, Muneki Hamashima
  • Publication number: 20070018101
    Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
    Type: Application
    Filed: September 28, 2006
    Publication date: January 25, 2007
    Applicant: EBARA CORPORATION
    Inventors: Mamoru Nakasuji, Nobuhara Noji, Tohru Satake, Masahiro Hatakeyama, Kenji Watanabe, Takao Kato, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima
  • Patent number: 7135676
    Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: November 14, 2006
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi
  • Patent number: 7129485
    Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
    Type: Grant
    Filed: January 29, 2004
    Date of Patent: October 31, 2006
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Kenji Watanabe, Takao Kato, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima
  • Patent number: 7109483
    Abstract: The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: September 19, 2006
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Masahiro Hatakeyama, Kenji Watanabe, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Shin Oowada, Mutsumi Saito, Muneki Hamashima
  • Patent number: RE40221
    Abstract: This invention relates to an object observation apparatus and observation method.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: April 8, 2008
    Assignee: Nikon Corporation
    Inventors: Muneki Hamashima, Yoichi Watanabe, Yoshiaki Kohama