Abstract: The present invention aims to provide a fuel battery system improved in reliability by accurately detecting when a fuel electrode gas or an air electrode gas has leaked. A fuel battery cell according to the present invention includes a first electrode, an electrolyte membrane, and a second electrode which are layered on a support substrate. Further, at least any one of the first electrode, the electrolyte membrane, and the second electrode is electrically isolated by an insulating member to form a first region and a second region. The insulating member is disposed at a position where the insulating member does not overlap with an opening portion of the support substrate (refer to FIG. 3).

Abstract: The present invention aims to provide a fuel battery system improved in reliability by accurately detecting when a fuel electrode gas or an air electrode gas has leaked. A fuel battery cell according to the present invention includes a first electrode, an electrolyte membrane, and a second electrode which are layered on a support substrate. Further, at least any one of the first electrode, the electrolyte membrane, and the second electrode is electrically isolated by an insulating member to form a first region and a second region. The insulating member is disposed at a position where the insulating member does not overlap with an opening portion of the support substrate (refer to FIG. 3).

Abstract: Provided is a solid oxide fuel cell having high power generation efficiency and being operable at low temperature. A fuel cell of the present invention includes a cathode electrode, an anode electrode, and a solid electrolyte layer disposed between the cathode electrode and the anode electrode and formed from polycrystalline zirconia or polycrystalline ceria doped with divalent or trivalent positive ions and having proton conductivity, in which the cathode electrode and the solid electrolyte layer are stacked with a first oxygen ion blocking layer interposed therebetween.

Abstract: There is provided a fluid detection device that detects a flow velocity or a flow rate of a fluid flowing through a piping, the fluid detection device including: a sound detection unit that detects a sound from the piping, and outputs a frequency signal; a signal processing unit that calculates a strength ratio of the frequency signal on the basis of the frequency signal and a predetermined reference frequency signal; and a data conversion unit that obtains the flow velocity or the flow rate on the basis of the strength ratio of the frequency signal and a predetermined fluid characteristic function.

Abstract: To provide a high-performance semiconductor sensor device and a method for manufacturing the semiconductor sensor device. This semiconductor sensor device has a sensor chip, and a first thin film formed on the sensor chip, said sensor chip being mechanically connected, via the first thin film, to a second thin film formed on a base formed of a polycrystalline material.

Abstract: In order to provide a technology capable of suppressing degradation of measurement accuracy due to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+?1) occurs in the beam 4a and a compressive stress (??2) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.

Abstract: To provide a high-performance semiconductor sensor device and a method for manufacturing the semiconductor sensor device. This semiconductor sensor device has a sensor chip, and a first thin film formed on the sensor chip, said sensor chip being mechanically connected, via the first thin film, to a second thin film formed on a base formed of a polycrystalline material.

Abstract: There is provided a fluid detection device that detects a flow velocity or a flow rate of a fluid flowing through. a piping, the fluid detection. device including: a sound detection unit that detects a sound from the piping, and outputs a frequency signal; a signal processing unit that calculates a strength ratio of the frequency signal on the basis of the frequency signal and a predetermined reference frequency signal; and a data conversion unit that obtains the flow velocity or the flow rate on the basis of the strength ratio of the frequency signal and a predetermined fluid characteristic function.

Abstract: Provided is an inertia sensor that can be reduced in size. An inertia sensor having layers 1a, 2a in which detection parts 20, 30 are formed, the inertial sensor being a laminated structure obtained by laminating two or more of the layers.

Abstract: The purpose of the present invention is to improve the pressure resistance of a cavity in a semiconductor sensor device employing a resin package, and to do so without adversely affecting the embeddability of an electrically conductive member. The semiconductor sensor device has a gap 1a sealed in an airtight manner inside a laminate structure of a plurality of laminated substrates 1, 4, and 5, and has a structure in which the outside of the laminate structure is covered by a resin, wherein a platy component 2 having at least one side that is greater in length than the length of one side of the gap 1a along this side is arranged to the outside of an upper wall 1b of the gap 1, the upper wall 1b of the gap being mechanically suspended by the platy component 2.

Abstract: In order to provide a technology capable of suppressing degradation of measurement accuracy ale to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+?1) occurs in the beam 4a and a compressive stress (?2) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.

Abstract: In order to provide a technology capable of suppressing degradation of measurement accuracy due to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+?1) occurs in the beam 4a and a compressive stress (??2) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.

Abstract: This invention is directed to provision of high-performance inertial sensor that can sustain SNR even in an environment where vibration disturbance exists. A vibration type inertial sensor comprises: two deadweights (2, 3); means (C1, C2, C3, C4, +vd, ?vd) for displacing the two dead weights in the anti-phase; two sets of electrodes (C5, C6, C7, C8) for detecting, as capacitance changes, the displacements of the two dead weights; and a C/V converting unit (53) for converting the capacitance changes of the electrodes to electric signals. In the vibration type inertial sensor, a set of electrodes (e.g., C5 and C8), which exhibit an increased electrostatic capacitance therebetween in the case where the two dead weights (2, 3) are displaced in the anti-phase, are electrically connected to each other, and a set of electrodes (e.g.

Abstract: In order to provide a technology capable of suppressing degradation of measurement accuracy due to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+?1) occurs in the beam 4a and a compressive stress (??2) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.

Abstract: In order to provide a technology capable of suppressing degradation of measurement accuracy due to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+?1) occurs in the beam 4a and a compressive stress (??2) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.

Abstract: This invention is directed to provision of high-performance inertial sensor that can sustain SNR even in an environment where vibration disturbance exists. A vibration type inertial sensor comprises: two deadweights (2, 3); means (C1, C2, C3, C4, +vd, ?vd) for displacing the two dead weights in the anti-phase; two sets of electrodes (C5, C6, C7, C8) for detecting, as capacitance changes, the displacements of the two dead weights; and a C/V converting unit (53) for converting the capacitance changes of the electrodes to electric signals. In the vibration type inertial sensor, a set of electrodes (e.g., C5 and C8), which exhibit an increased electrostatic capacitance therebetween in the case where the two dead weights (2, 3) are displaced in the anti-phase, are electrically connected to each other, and a set of electrodes (e.g.

Abstract: In order to provide a technology capable of suppressing degradation of measurement accuracy due to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+?1) occurs in the beam 4a and a compressive stress (??2) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.