Abstract: A polycarbonate resin having a high refractive index, a low Abbe number and a high moisture and heat resistance is provided. In an embodiment, a polycarbonate resin including a structural unit represented by general formula (1) below is provided.

Abstract: Provided is a semiconductor device in which a first anode layer and a first contact layer are provided on a first main surface side in a diode region, and in which a second anode layer and a second contact layer are provided on the first main surface side in a boundary region. A concentration of impurities of a second conductive type of the second anode layer is lower than a concentration of impurities of the second conductive type of the first anode layer, or an occupied area ratio of the second contact layer with respect to the area where the emitter electrode is in contact with the semiconductor substrate in the boundary region is smaller than an occupied area ratio of the first contact layer with respect to the area where the emitter electrode is in contact with the semiconductor substrate in the diode region.

Abstract: An IGBT region includes: an n-type carrier accumulation layer provided to be in contact with the n?-type drift layer on the first main surface side of the n?-type drift layer and having a higher n-type impurity concentration than the n?-type drift layer, a p-type base layer provided between the n-type carrier accumulation layer and the first main surface, an n+-type emitter layer selectively provided in a surface layer portion of the p-type base layer, and a gate electrode provided to face the n+-type emitter layer and the p-type base layer with an interposition of an insulating film. A diode region includes a p-type anode layer provided between the n?-type drift layer and the first main surface and provided to a position deeper from the first main surface than a boundary between the n-type carrier accumulation layer and the n?-type drift layer.

Abstract: Provided is a semiconductor device in which a first anode layer and a first contact layer are provided on a first main surface side in a diode region, and in which a second anode layer and a second contact layer are provided on the first main surface side in a boundary region. A concentration of impurities of a second conductive type of the second anode layer is lower than a concentration of impurities of the second conductive type of the first anode layer, or an occupied area ratio of the second contact layer with respect to the area where the emitter electrode is in contact with the semiconductor substrate in the boundary region is smaller than an occupied area ratio of the first contact layer with respect to the area where the emitter electrode is in contact with the semiconductor substrate in the diode region.

Abstract: The semiconductor device according to the present application includes: a hole injection region including a hole injection layer and a semiconductor layer of a second conductivity type; a diode region including an anode layer of a second conductivity type and a cathode layer of a first conductivity type; a boundary portion semiconductor layer of a second conductivity type provided between the diode region and the hole injection region and provided on a first main surface side; a carrier injection suppression layer of a first conductivity type provided in a surface layer of the boundary portion semiconductor layer; and a semiconductor layer of a second conductivity type provided to protrude from the hole injection region on a second main surface side.

Abstract: A liquid crystal projector having a light source device which comprises a first reflective mirror surrounding a light source; a second reflective mirror which is disposed before the first mirror in the light emission direction and has a convergent shape with respect to the light source; a lamp house surrounding the light source, the first and second mirrors, and having an opening for cooling the light source positioned behind the first mirror; a first lamp shade disposed behind the light source and the first mirror, and having an area of an appropriate transverse cross section of a phantom cone or pyramid which is defined by a series of phantom linear lines connecting the light source and the contour of the opening for cooling the light source; and a second lamp shade disposed outside a curved wall of the first mirror and before the light source.