Abstract: A processing tank 10 is divided into a washing section 15 and a drying section 30, a clearance is formed in the joint between the sections, and the clearance is communicated with by sink 29. In drying a substrate, the substrate is moved from the washing section to the drying section, a porous plate 28 is inserted into the lower region where the clearance is formed, and a drying gas is jetted against the substrate with the internal pressure of the drying section 30 kept higher than that of the sink 29 and the internal pressure of the washing section 15 kept lower than that of the drying section 30. In this case, it is preferable that the porous plate 28 is a punched plate in which plural small holes having predetermined diameters have been made. The above configuration provides a substrate processing method and a substrate processing device in which the drying gas can uniformly and stably be supplied to an assembly of plural substrates.

Abstract: A substrate processing apparatus 10 including a vapor generating unit 371 which generates a mixed gas consisting of an organic solvent vapor and an inert gas by bubbling the inert gas in the organic solvent; support means for supporting a plurality of substrates to be vertically arranged in parallel at equal pitches; a processing vessel 15 which accommodates multiple substrates supported by the support means; a lid 30 for covering the upper opening of the processing vessel; jet nozzles 33 provided in the lid 30; and first piping 3712, 342, 3421, and 3422 which causes the vapor generating unit and the jet nozzles to communicate with each other. In the substrate processing apparatus 10, the first piping and the jet nozzles are respectively equipped with heaters, and the heaters are controlled by means of dry gas containing organic solvent mists of submicron size being emitted from the jet nozzles.

Abstract: A substrate processing apparatus 10 including a vapor generating unit 371 which generates a mixed gas consisting of an organic solvent vapor and an inert gas by bubbling the inert gas in the organic solvent; support means for supporting a plurality of substrates to be vertically arranged in parallel at equal pitches; a processing vessel 15 which accommodates multiple substrates supported by the support means; a lid 30 for covering the upper opening of the processing vessel; jet nozzles 33 provided in the lid 30; and first piping 3712, 342, 3421, and 3422 which causes the vapor generating unit and the jet nozzles to communicate with each other. In the substrate processing apparatus 10, the first piping and the jet nozzles are respectively equipped with heaters, and the heaters are controlled by means of dry gas containing organic solvent mists of submicron size being emitted from the jet nozzles.

Abstract: A processing tank 10 is divided into a washing section 15 and a drying section 30, a clearance is formed in the joint between the sections, and the clearance is communicated with by sink 29. In drying a substrate, the substrate is moved from the washing section to the drying section, a porous plate 28 is inserted into the lower region where the clearance is formed, and a drying gas is jetted against the substrate with the internal pressure of the drying section 30 kept higher than that of the sink 29 and the internal pressure of the washing section 15 kept lower than that of the drying section 30. In this case, it is preferable that the porous plate 28 is a punched plate in which plural small holes having predetermined diameters have been made. The above configuration provides a substrate processing method and a substrate processing device in which the drying gas can uniformly and stably be supplied to an assembly of plural substrates.