Abstract: An apparatus for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction to chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.

Abstract: A method for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 is connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.

Abstract: A gas feeder for feeding a gas is disclosed. The gas feeder comprises a bubbler holding a source liquid and passing a carrier gas through the liquid, a first sensor provided upstream of the bubbler, sensing the volumetric flow of the carrier gas and producing a carrier gas flow signal, a second sensor provided downstream of the bubbler, sensing the volumetric flow of the mixture and producing a gas mixture flow signal, a valve provided downstream of the bubbler and controlling the volumetric flow of the mixture, and a computer. The computer computes the concentration of the source gas from the carrier gas flow signal and the gas mixture flow signal and estimates the mass flow of the source gas from a product of the computed concentration of the source gas and the volumetric flow of the carrier gas.

Abstract: A wafer transfer system consisting of automatic robot claws and a susceptor having circularly bounded and round-bottomed concavities for receiving wafers, wherein the concavities of the susceptor are each provided with at least three trenches made across the circumference of each concavity and arranged equiangularly about the center of each concavity; that each trench is formed such that when a wafer is set in the concavity that portion of the edge of the wafer which is disposed in the trench defines under itself a space in communication with the rest of the space defined by the trench; and that the automatic claws each have as many nails as the number of the trenches of each concavity and are capable of opening and closing the nails which are designed to engage with the wafer in the concavity by inserting the nail tips into the respective space defined under the edge of the wafer.

Abstract: A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.