Patents by Inventor Muneyasu Nakashima

Muneyasu Nakashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing an InSb thin film element
    Patent number: 4177298
    Abstract: A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.
    Type: Grant
    Filed: March 20, 1978
    Date of Patent: December 4, 1979
    Assignee: Hitachi, Ltd.
    Inventors: Junji Shigeta, Tetsu Oi, Nobuo Kotera, Muneyasu Nakashima, Nobuo Miyamoto