Patents by Inventor Muneyuki HIRAI

Muneyuki HIRAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[?]][?] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
    Patent number: 9755111
    Abstract: A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlyInxGazN (y?0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y?0, x>0) crystal as the mother crystal.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: September 5, 2017
    Assignees: NITTO OPTICAL CO., LTD., SOLARTES Lab, LTD.
    Inventors: Kazutaka Terashima, Suzuka Nishimura, Muneyuki Hirai
  • Method for producing GaN-based crystal and semiconductor device
    Patent number: 9595632
    Abstract: A method for producing a GaN-based crystal includes forming a Zinc-blend type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blend type structure; and forming a Zinc-blend type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: March 14, 2017
    Assignees: NITTO OPTICAL CO., LTD., SOLARTES Lab, Ltd.
    Inventors: Kazutaka Terashima, Suzuka Nishimura, Muneyuki Hirai
  • ACTIVE REGION CONTAINING NANODOTS (ALSO REFERRED TO AS "QUANTUM DOTS") IN MOTHER CRYSTAL FORMED OF ZINC BLENDE-TYPE (ALSO REFERRED TO AS "CUBIC CRYSTAL-TYPE") AlyInxGal-y-xN CRYSTAL(Y . 0, X>0) GROWN ON Si SUBSTRATE, AND LIGHTEMITTING DEVICE USING THE SAME (LED AND LD)
    Publication number: 20160087153
    Abstract: A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si substrate, an AlyInxGazN (y?0, x>0) crystal as a mother crystal maintaining the zinc blende-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y?0, x>0) crystal as the mother crystal.
    Type: Application
    Filed: December 4, 2015
    Publication date: March 24, 2016
    Applicants: NITTO OPTICAL CO., LTD., SOLARTES Lab., LTD.
    Inventors: Kazutaka Terashima, Suzuka NISHIMURA, Muneyuki HIRAI
  • METHOD FOR PRODUCING GaN-BASED CRYSTAL AND SEMICONDUCTOR DEVICE
    Publication number: 20150194569
    Abstract: A method for producing a GaN-based crystal includes forming a Zinc-blende type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a Zinc-blende type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.
    Type: Application
    Filed: February 23, 2015
    Publication date: July 9, 2015
    Applicants: SOLARTES LAB., LTD., NITTO OPTICAL CO., LTD.
    Inventors: Kazutaka TERASHIMA, Suzuka NISHIMURA, Muneyuki HIRAI