Abstract: Described herein are devices operable to detect various portions of radiation incident on a receiving area of the device, systems incorporating the same, methods of using and methods of manufacturing thereof. Such a device comprises a substrate; at least one first feature; and at least one second feature, both extending substantially perpendicularly from the substrate. The at least one first feature and the at least second feature are operable to selectively absorb various portions of the radiation defined by their respective ranges of wavelengths. The at least one first feature and the at least one second feature are positioned on the substrate such that at least 50% of the first portion and at least 50% of the second portion of the radiation incident on the receiving area is selectively absorbed by the at least one first feature and the at least one second feature, respectively.

Abstract: An embodiment relates to a device comprising an optical pipe comprising a core and a cladding, the optical pipe being configured to separate wavelengths of an electromagnetic radiation beam incident on the optical pipe at a selective wavelength through the core and the cladding, wherein the core is configured to be both a channel to transmit the wavelengths up to the selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the core. Other embodiments relate to a compound light detector.

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Abstract: An embodiment relates to image sensor comprising one or more nanowires on a substrate of a cavity, the nanowire being configured to transmit a first portion of an electromagnetic radiation beam incident on the sensor, and the substrate that absorbs a second portion of the electromagnetic radiation beam incident on the sensor, wherein the first portion is substantially different from the second portion. The substrate could have a anti-reflective material. The ratio of a diameter of the cavity to a diameter of the nanowire could be at less than about 10.

Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, a first plurality of structures essentially perpendicular to the substrate and disposed on a first face of the substrate, and a second plurality of structures essentially perpendicular to the substrate and disposed on a second face of the substrate, wherein both the first plurality and the second plurality of structures are configured to convert light to electricity.

Abstract: Photodetector devices and methods for making the photodetector devices are disclosed herein. In an embodiment, the device may include a substrate; and one or more core structures, each having one or more shell layers disposed at least on a portion of a sidewall of the core structure. Each of the one or more structures extends substantially perpendicularly from the substrate. Each of the one or more core structures and the one or more shell layers form a Schottky barrier junction or a metal-insulator-semiconductor (MiS) junction.

Abstract: An embodiment relates to image sensor comprising one or more nanowires on a substrate of a cavity, the nanowire being configured to transmit a first portion of an electromagnetic radiation beam incident on the sensor, and the substrate that absorbs a second portion of the electromagnetic radiation beam incident on the sensor, wherein the first portion is substantially different from the second portion. The substrate could have a anti-reflective material. The ratio of a diameter of the cavity to a diameter of the nanowire could be at less than about 10.

Abstract: Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.

Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.

Abstract: An optical apparatus, including an optical filter comprising an array of nanowires oriented perpendicular to a light incidence surface of the filter, wherein the optical filter transmits light at a first wavelength that is incident on the incidence surface, wherein the first wavelength is based on a cross-sectional shape of the nanowires. The nanowires are created using a single lithography step. An imaging device and a method of fabricating the same, the device including an array of nanowires formed on a substrate, wherein at least one nanowire in the array of nanowires includes a photoelectric element to produce a photocurrent based, at least in part, on incident photons absorbed by the at least one nanowire.

Abstract: Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.

Abstract: A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.

Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.

Abstract: A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.

Abstract: A device operable to convert light to electricity, comprising: a substrate comprising a semiconductor material, one or more structures essentially perpendicular to the substrate, one or more layers conformally disposed on the one or more structures wherein the one or more structures and the one or more layers form one or more junctions, and an electrically conductive material disposed on the substrate in the area between the one or more structures.

Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: Color filter array devices and methods of making color filter array devices are disclosed herein. A color filter array may include a substrate having a plurality of pixels thereon, one or more nanowires associated with each of the plurality of pixels, wherein each of the one or more nanowires extends substantially perpendicularly from the substrate, and an optical coupler associated with each of the one or more nanowires. A method of making a color filter array may include, making an array of nanowires, wherein each of the nanowires extend substantially perpendicularly from a substrate, disposing a transparent polymer material to substantially encapsulate the nanowires, removing the nanowires from the substrate, providing a pixel array comprising a plurality of pixels, wherein a hard polymer substantially covers an image plane of the pixel array, disposing the array of nanowires on the pixel array, and removing the transparent polymer encapsulating the nanowires.

Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.