Abstract: An embodiment of the invention is luminescent silicon nanoparticle polymer composite that can serve as a wavelength converter or a UV absorber. The composite includes a polymer or an organosilicon compound; and within, the polymer or organosilicon compound, a dispersion of luminescent silicon nanoparticles. In a preferred composite, the silicon nanoparticles having a multiple Si—H termination sites, the silicon nanoparticles being linked to a C cite to produce a silicon carbide bond (Si—C). In a preferred embodiment, the polymer comprises polyurethane. A composite of the invention can perform wavelength conversion. In a wavelength converted film of the invention, the silicon nanoparticles are incorporated into the polymer or organosilicon compound in a quantity sufficient for wavelength conversion but small enough to have no or an insubstantial affect on the properties of the polymer or the organosilicon compound.

Abstract: A composite of the invention is a homogenous mixture of room temperature vulcanizing material or polymer and luminescent silicon nanoparticles. The composite can be formed into a film and can serve as a paint, adhesive, or coating, depending upon the material or polymer used. A preferred polymer is polyurethane. A method for forming a silicon nanoparticle and room temperature vulcanizing (RTV) material or polymer composite of the invention includes steps providing silicon nanoparticles that were prepared in a solvent. The solvent is mixed with RTV or polymer precursors. The RTV or polymer components are permitted to cure. A preferred solvent is isopropynol alcohol.

Abstract: The invention provides the use of silicon particles as redox catalyst, an electrochemical device and method thereof. As electrocatalyst, the silicon particles catalyze a redox reaction such as oxidization of the redox reactant such as renewable fuels e.g. methanol, ethanol and glucose. The device such as a fuel cell comprises a redox reactant and a catalytic composition comprising silicon nanoparticles. The silicon particles catalyze the redox reaction on an electrode such as anode in the device. In preferred embodiments, the electrocatalysis is dramatically improved under low illuminance such as in darkness. The invention can be widely used in applications related to for example a fuel cell, a sensor, an electrochemical reactor, and a memory.

Abstract: A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon nanoparticles. The substrate surface is completely immersed in the solution in a manner such that there is not an air/solution interface and there is no meniscus at the substrate surface. Application of electrical potential between the electrode and the substrate creates a film of silicon nanoparticles on the substrate. Drying of the film induces the film to roll up and form a silicon nanoparticle nanotube material. A film may be subdivided into an array of identical portions, and the identical portions will roll into identical tubes having same length and diameter. A silicon nanoparticle nanotube material of the invention includes nanotubes formed of silicon nanoparticles.

Abstract: A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon nanoparticles. The substrate surface is completely immersed in the solution in a manner such that there is not an air/solution interface and there is no meniscus at the substrate surface. Application of electrical potential between the electrode and the substrate creates a film of silicon nanoparticles on the substrate. Drying of the film induces the film to roll up and form a silicon nanoparticle nanotube material. A film may be subdivided into an array of identical portions, and the identical portions will roll into identical tubes having same length and diameter. A silicon nanoparticle nanotube material of the invention includes nanotubes formed of silicon nanoparticles.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.

Abstract: A UV detector has a UV detection thin film of coated spherical silicon nanoparticles formed upon a substrate. The detector includes structures to bias the thin film. In preferred embodiments, a thin conductor that is at least semi-transparent to UV radiation is formed over the thin film. In preferred embodiments, the UV detector is formed as a silicon based integration, upon a device quality silicon wafer.

Abstract: A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

Abstract: Highly uniform 1 nm silicon nanoparticles are provided by the invention. The nanoparticles exhibit beneficial properties. They are a source of stimulated emissions. They may be suspended in liquids, and solids. They can be formed into crystals, colloids and films. The nanoparticles of the invention are about 1 nm having about only one part in one thousand greater than 1 nm. A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form plural nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.

Abstract: According to the invention, silicon nanoparticles are applied to a substrate using an electrochemical plating processes, analogous to metal plating. An electrolysis tank of an aqueous or non-aqueous solution, such as alcohol, ether, or other solvents in which the particles are dissolved operates at a current flow between the electrodes. In applying silicon nanoparticles to a silicon, metal, or non-conducting substrate, a selective area plating may be accomplished by defining areas of different conductivity on the substrate. Silicon nanoparticle composite platings and stacked alternating material platings are also possible. The addition of metal ions into the silicon nanoparticle solution produces a composite material plating. Either composite silicon nanoparticle platings or pure silicon nanoparticle platings may be stacked with each other or with convention metal platings.

Abstract: A UV detector has a UV detection thin film of coated spherical silicon nanoparticles formed upon a substrate. The detector includes structures to bias the thin film. In preferred embodiments, a thin conductor that is at least semi-transparent to UV radiation is formed over the thin film. In preferred embodiments, the UV detector is formed as a silicon based integration, upon a device quality silicon wafer.

Abstract: Highly uniform 1 nm silicon nanoparticles are provided by the invention. The nanoparticles exhibit beneficial properties. They are a source of stimulated emissions. They may be suspended in liquids, and solids. They can be formed into crystals, colloids and films. The nanoparticles of the invention are about 1 nm having about only one part in one thousand greater than 1 nm. A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form plural nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Abstract: The invention concerns elemental silicon emission devices. Devices according to the invention use elemental silicon nanoparticles as a material from which stimulated emissions are produced. Silicon nanoparticles efficiently produce emissions and act as a gain medium in response to excitation. The silicon nanoparticles of the invention, being dimensioned on an order of magnitude of one nanometer and having about 1 part per thousand or less larger than 1 nm, are an efficient emission source and forms the basis for many useful devices.

Abstract: A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Abstract: According to the invention, silicon nanoparticles are applied to a substrate using an electrochemical plating processes, analogous to metal plating. An electrolysis tank of an aqueous or non-aqueous solution, such as alcohol, ether, or other solvents in which the particles are dissolved operates at a current flow between the electrodes. In applying silicon nanoparticles to a silicon, metal, or non-conducting substrate, a selective area plating may be accomplished by defining areas of different conductivity on the substrate. Silicon nanoparticle composite platings and stacked alternating material platings are also possible. The addition of metal ions into the silicon nanoparticle solution produces a composite material plating. Either composite silicon nanoparticle platings or pure silicon nanoparticle platings may be stacked with each other or with convention metal platings.

Abstract: Harmonic incident radiation is obtained from a silicon nanoparticle microcrystal or microcrystal film. The preferred film comprises silicon nanoparticles, dimensioned on the order of one nanometer, reconstituted into a device quality crystalline film. The microcrystal film emits the second harmonic of incident radiation for excitations in the range of about 600-1000 nm. A preferred device according to the invention includes a silicon nanoparticle microcrystal film formed on a substrate, such as silicon or glass. Crystals of the silicon nanoparticles, due to the harmonic response, also demonstrate the capability to serve as piezoelectric material and as an improved biological marker. Since the emission response of the silicon nanoparticle crystals will be influenced by surrounding electric fields, the microcrystals also provide for electrochromatic mapping of electric field distribution in general and in electronic devices.

Abstract: An electronic fast switch for operation at room temperature utilizing uniform silicon nanoparticles (˜1 nm with about 1 part per thousand exceeding 1 nm) between two conducting electrodes. The silicon nanoparticles, when on an n-type silicon substrate exhibit, at zero bias, a large differential conductance, approaching near full transparency. The conductance is observed after one of the electrode is first biased at a voltage in the range 3 to 5 eV (switching voltage), otherwise the device does not conduct (closed). A practical MOSFET switch of the invention includes the silicon nanoparticles in a body of the MOSFET, with the gate and substrate forming the two conducting electrodes. Electrodes may be realized by metal in other switches of the invention.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.