Patents by Inventor Murali Balakrishnan

Murali Balakrishnan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cells and methods of forming memory cells
    Patent number: 8859329
    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: October 14, 2014
    Assignee: Micron Technology, Inc.
    Inventors: D. V. Nirmal Ramaswamy, Murali Balakrishnan, Alessandro Torsi, Noel Rocklein
  • MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS
    Publication number: 20140231743
    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.
    Type: Application
    Filed: April 23, 2014
    Publication date: August 21, 2014
    Applicant: Micron Technology, Inc.
    Inventors: D. V. Nirmal Ramaswamy, Murali Balakrishnan, Alessandro Torsi, Noel Rocklein
  • Memory cells and methods of forming memory cells
    Patent number: 8753919
    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: June 17, 2014
    Assignee: Micron Technology, Inc.
    Inventors: D. V. Nirmal Ramaswamy, Murali Balakrishnan, Alessandro Torsi, Noel Rocklein
  • MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS
    Publication number: 20140106533
    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.
    Type: Application
    Filed: December 12, 2013
    Publication date: April 17, 2014
    Applicant: Micron Technology, Inc.
    Inventors: D.V. Nirmal Ramaswamy, Murali Balakrishnan, Alessandro Torsi, Noel Rocklein
  • Memory cells
    Patent number: 8629421
    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: January 14, 2014
    Assignee: Micron Technology, Inc.
    Inventors: D.V. Nirmal Ramaswamy, Murali Balakrishnan, Alessandro Torsi, Noel Rocklein