Patents by Inventor Murali K. Narasimhan
Murali K. Narasimhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9209074Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.Type: GrantFiled: May 20, 2015Date of Patent: December 8, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Jiang Lu, Hyoung-Chan Ha, Paul F. Ma, Seshadri Ganguli, Joseph F. Aubuchon, Sang-ho Yu, Murali K. Narasimhan
-
Publication number: 20150255333Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.Type: ApplicationFiled: May 20, 2015Publication date: September 10, 2015Inventors: Jiang LU, Hyoung-Chan HA, Paul F. MA, Seshadri GANGULI, Joseph F. AUBUCHON, Sang-ho YU, Murali K. NARASIMHAN
-
Patent number: 9051641Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.Type: GrantFiled: August 29, 2008Date of Patent: June 9, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Jiang Lu, Hyoung-Chan Ha, Paul Ma, Seshadri Ganguli, Joseph F. Aubuchon, Sang Ho Yu, Murali K. Narasimhan
-
Patent number: 8835311Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.).Type: GrantFiled: December 31, 2013Date of Patent: September 16, 2014Assignee: Applied Materials, Inc.Inventors: Joshua Collins, Murali K. Narasimhan, Jingjing Liu, Sang-Hyeob Lee, Kai Wu, Avgerinos V. Gelatos
-
Publication number: 20140187038Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.).Type: ApplicationFiled: December 31, 2013Publication date: July 3, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Joshua COLLINS, Murali K. NARASIMHAN, Jingjing LIU, Sang-Hyeob LEE, Kai WU, Avgerinos V. GELATOS
-
Patent number: 8764961Abstract: A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.Type: GrantFiled: October 22, 2008Date of Patent: July 1, 2014Assignee: Applied Materials, Inc.Inventors: Qian Luo, Arvind Sundarrajan, Hua Chung, Xianmin Tang, Jick M. Yu, Murali K. Narasimhan
-
Publication number: 20140165911Abstract: Embodiments of apparatus for providing plasma to a process chamber are provided. In some embodiments, an apparatus may include a first ground plate; an electrode disposed beneath and spaced apart from the first ground plate by a first electrical insulator to define a first gap between the first ground plate and the electrode; a second ground plate disposed beneath and spaced apart from the electrode by a second electrical insulator to define a second gap between the electrode and the second ground plate; a gas inlet to provide a process gas to the first gap; a plurality of through holes disposed through the electrode coupling the first gap to the second gap; and a plurality of first gas outlet holes disposed through the second ground plate to fluidly couple the second gap to an area beneath the second plate.Type: ApplicationFiled: December 14, 2012Publication date: June 19, 2014Applicant: APPLIED MATERIALS, INC.Inventors: CHIEN-TEH KAO, HYMAN W.H. LAM, NICHOLAS R. DENNY, DAVID T. OR, MEI CHANG, MURALI K. NARASIMHAN
-
Patent number: 8642473Abstract: Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.Type: GrantFiled: March 2, 2012Date of Patent: February 4, 2014Assignee: Applied Materials, Inc.Inventors: Mei Chang, Linh Thanh, Bo Zheng, Arvind Sundarrajan, John C. Forster, Umesh M. Kellkar, Murali K. Narasimhan
-
Patent number: 8617985Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.).Type: GrantFiled: October 25, 2012Date of Patent: December 31, 2013Assignee: Applied Materials, Inc.Inventors: Joshua Collins, Murali K. Narasimhan, Jingjing Liu, Sang-Hyeob Lee, Kai Wu, Avgerinos V. Gelatos
-
Publication number: 20130109172Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.).Type: ApplicationFiled: October 25, 2012Publication date: May 2, 2013Inventors: JOSHUA COLLINS, Murali K. Narasimhan, Jingjing Liu, Sang-Hyeob Lee, Kai Wu, Avgerinos V. Gelatos
-
Publication number: 20120237693Abstract: Embodiments of the invention include methods for in-situ chamber dry clean for metal deposition chambers.Type: ApplicationFiled: March 16, 2012Publication date: September 20, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Michael Jackson, Song-Moon Suh, Arvind Sundarajjan, Murali K. Narasimhan, Sriskantharajah Thirunavukarasu
-
Publication number: 20110315319Abstract: Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit.Type: ApplicationFiled: June 22, 2011Publication date: December 29, 2011Applicant: APPLIED MATERIALS, INC.Inventors: JOHN C. FORSTER, TAE HONG HA, MURALI K. NARASIMHAN, XINYU FU, ARVIND SUNDARRAJAN, XIAOXI GUO
-
Publication number: 20100096273Abstract: A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.Type: ApplicationFiled: October 22, 2008Publication date: April 22, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Qian Luo, Arvind Sundarrajan, Hua Chung, Xianmin Tang, Jick M. Yu, Murali K. Narasimhan
-
Publication number: 20090053426Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.Type: ApplicationFiled: August 29, 2008Publication date: February 26, 2009Inventors: JIANG LU, Hyoung-Chan Ha, Paul Ma, Seshadri Ganguli, Joseph F. Aubuchon, Sang Ho Yu, Murali K. Narasimhan
-
Patent number: 7050160Abstract: A process for measuring both the reflectance and sheet resistance of a thin film, such as a metal film or a doped semiconductor, in a common apparatus comprises: directing a beam of radiation from a radiation source on the common apparatus onto a portion of the surface of the thin film, sensing the amount of radiation reflected from the surface of the thin film, and contacting the surface of the thin film with a sheet resistance measurement apparatus on the apparatus at a portion of the surface of the thin film coincident with or adjacent to the portion of the thin film contacted by the radiation beam to measure the sheet resistance of the thin film. The sheet resistance measurement apparatus may, by way of example, comprise a 4 point probe or an eddy current measurement apparatus. The respective measurements may be carried out either simultaneously or sequentially.Type: GrantFiled: April 3, 2003Date of Patent: May 23, 2006Assignee: KLA-Tencor Technologies CorporationInventors: Walter H. Johnson, Jagadish Kalyanam, Shankar Krishnan, Murali K. Narasimhan
-
Patent number: 5972178Abstract: A continuous process for the deposition of robust titanium-containing barrier layers comprises sputtering in a single substrate sputtering chamber a first layer of titanium, sputtering a layer of titanium nitride thereover, treating the titanium nitride layer with a plasma containing oxygen while continuing to sputter the titanium target to deposit a thin layer of TiON, and finally sputtering a layer of titanium over the titanium nitride. The latter step removes impurities from the titanium target, preventing poisoning of the target. Thus subsequent substrates can be continuously processed in said chamber without degrading the barrier properties or poisoning the titanium target.Type: GrantFiled: June 7, 1995Date of Patent: October 26, 1999Assignee: Applied Materials, Inc.Inventors: Murali K. Narasimhan, Kenny King-Tai Ngan, Nitin Khurana, Bradley O. Stimson