Patents by Inventor Murali Ramasubramanian

Murali Ramasubramanian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8367244
    Abstract: The present invention relates to methods for producing anode materials for use in nonaqueous electrolyte secondary batteries. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a solution containing metals ions and a dissolution component. When the anode material is contacted with the solution, the dissolution component dissolves a part of the semiconductor material in the anode material and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer. The anode material of the present invention can be in a monolithic form or a particle form. When the anode material is in a particle form, the particulate anode material can be further shaped and sintered to agglomerate the particulate anode material.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: February 5, 2013
    Assignee: Enovix Corporation
    Inventors: Murali Ramasubramanian, Robert M. Spotnitz
  • Publication number: 20130019468
    Abstract: A battery includes an anode and a cathode. An electrolyte material is disposed between the anode and the cathode. A separator is disposed between the anode and the cathode. The separator comprises an anodized metal oxide layer having substantially straight and parallel through-pores, wherein the anodized metal oxide of the porous anodized metal oxide layer is selected from the group consisting of aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tungsten oxide, tantalum oxide, and hafnium oxide.
    Type: Application
    Filed: June 6, 2012
    Publication date: January 24, 2013
    Applicant: ENOVIX CORPORATION
    Inventors: Murali RAMASUBRAMANIAN, Robert SPOTNITZ
  • Patent number: 8221598
    Abstract: A system for plating according to one embodiment includes a plating cell containing plating solution; an anode in contact with the plating solution; a cathode in contact with the plating solution; and a hydrogen electrode in contact with the plating solution.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: July 17, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wolfgang Diel, Richard M. Peekema, Murali Ramasubramanian
  • Publication number: 20120177993
    Abstract: The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.
    Type: Application
    Filed: February 15, 2012
    Publication date: July 12, 2012
    Applicant: ENOVIX CORPORATION
    Inventors: Murali RAMASUBRAMANIAN, Robert SPOTNITZ
  • Publication number: 20120176093
    Abstract: The present invention includes three-dimensional secondary battery cells comprising an electrolyte, a cathode, an anode, and an auxiliary electrode. The cathode, the anode, and the auxiliary electrode have a surface in contact with the electrolyte. The anode and the cathode are electrolytically coupled. The auxiliary electrode is electrolytically coupled and electrically coupled to at least one of the anode or the cathode. Electrically coupled means directly or indirectly connected in series by wires, traces or other connecting elements. The average distance between the surface of the auxiliary electrode and the surface of the coupled cathode or the coupled anode is between about 1 micron and about 10,000 microns. The average distance means the average of the shortest path for ion transfer from every point on the coupled cathode or anode to the auxiliary electrode.
    Type: Application
    Filed: February 15, 2012
    Publication date: July 12, 2012
    Inventors: Murali Ramasubramanian, Robert Spotnitz
  • Patent number: 8216712
    Abstract: A battery includes an anode and a cathode. An electrolyte material is disposed between the anode and the cathode. A separator is disposed between the anode and the cathode. The separator comprises an anodized metal oxide layer haying substantially straight and parallel through-pores, wherein the anodized metal oxide of the porous anodized metal oxide layer is selected from the group consisting of aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tungsten oxide, tantalum oxide, and hafnium oxide.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: July 10, 2012
    Assignee: Enovix Corporation
    Inventors: Murali Ramasubramanian, Robert Spotnitz
  • Patent number: 8192788
    Abstract: The present invention is directed to methods of forming current collectors of an energy storage device. The current collectors can be formed either before forming the anode/cathode, or after forming the anode/cathode. In one embodiment, a current collector material is simultaneously deposited on an anode support structure and a cathode support structure to form an anode current collector and a cathode current collector. In another embodiment, a current collector material is simultaneously deposited on an anode and a cathode to form an anode current collector and a cathode current collector.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: June 5, 2012
    Assignee: Enovix Corporation
    Inventors: Nirav S. Shah, Murali Ramasubramanian
  • Publication number: 20120115026
    Abstract: The present invention relates to a negative electrode structure for use in a non-aqueous electrolyte secondary battery and a method of making such negative electrode structure. The negative electrode structure comprises: a monolithic anode comprising a semiconductor material, and a uniform ion transport structure disposed at the monolithic anode surface for contacting a non-aqueous electrolyte, wherein the uniform ion transport structure serves as a current collector and the negative electrode structure does not contain another current collector. The present invention also relates to a battery comprising the negative electrode structure of the present invention, a cathode, and a non-aqueous electrolyte.
    Type: Application
    Filed: April 17, 2009
    Publication date: May 10, 2012
    Inventors: Murali Ramasubramanian, Robert M. Spotnitz, Nirav S. Shah, Ashok Lahiri
  • Patent number: 8133613
    Abstract: The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.
    Type: Grant
    Filed: April 17, 2008
    Date of Patent: March 13, 2012
    Assignee: Enovix Corporation
    Inventors: Murali Ramasubramanian, Robert M. Spotnitz
  • Patent number: 8119269
    Abstract: The present invention includes three-dimensional secondary battery cells comprising an electrolyte, a cathode, an anode, and an auxiliary electrode. The cathode, the anode, and the auxiliary electrode have a surface in contact with the electrolyte. The anode and the cathode are electrolytically coupled. The auxiliary electrode is electrolytically coupled and electrically coupled to at least one of the anode or the cathode. Electrically coupled means directly or indirectly connected in series by wires, traces or other connecting elements. The average distance between the surface of the auxiliary electrode and the surface of the coupled cathode or the coupled anode is between about 1 micron and about 10,000 microns. The average distance means the average of the shortest path for ion transfer from every point on the coupled cathode or anode to the auxiliary electrode.
    Type: Grant
    Filed: May 12, 2008
    Date of Patent: February 21, 2012
    Assignee: Enovix Corporation
    Inventors: Murali Ramasubramanian, Robert M. Spotnitz
  • Publication number: 20110111283
    Abstract: Various methods and apparatus relating to three-dimensional battery structures and methods of manufacturing them are disclosed and claimed. In certain embodiments, a three-dimensional battery comprises a battery enclosure, and a first structural layer within the battery enclosure, where the first structural layer has a first surface, and a first plurality of conductive protrusions extend from the first surface. A first plurality of electrodes is located within the battery enclosure, where the first plurality of electrodes includes a plurality of cathodes and a plurality of anodes, and wherein the first plurality of electrodes includes a second plurality of electrodes selected from the first plurality of electrodes, each of the second plurality of electrodes being in contact with the outer surface of one of said first plurality of conductive protrusions. Some embodiments relate to processes of manufacturing energy storage devices with or without the use of a backbone structure or layer.
    Type: Application
    Filed: January 11, 2008
    Publication date: May 12, 2011
    Applicant: MICROAZURE CORPORATION
    Inventors: Harrold Jones Rust, III, Ashok Lahiri, Murali Ramasubramanian, Robert Spotnitz
  • Publication number: 20090263716
    Abstract: The present invention relates to methods for producing anode materials for use in nonaqueous electrolyte secondary batteries. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a solution containing metals ions and a dissolution component. When the anode material is contacted with the solution, the dissolution component dissolves a part of the semiconductor material in the anode material and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer. The anode material of the present invention can be in a monolithic form or a particle form. When the anode material is in a particle form, the particulate anode material can be further shaped and sintered to agglomerate the particulate anode material.
    Type: Application
    Filed: April 17, 2009
    Publication date: October 22, 2009
    Inventors: Murali Ramasubramanian, Robert M. Spotnitz
  • Publication number: 20090263717
    Abstract: The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.
    Type: Application
    Filed: April 17, 2008
    Publication date: October 22, 2009
    Inventors: Murali Ramasubramanian, Robert M. Spotnitz
  • Publication number: 20090208834
    Abstract: The present invention includes three-dimensional secondary battery cells comprising an electrolyte, a cathode, an anode, and an auxiliary electrode. The cathode, the anode, and the auxiliary electrode have a surface in contact with the electrolyte. The anode and the cathode are electrolytically coupled. The auxiliary electrode is electrolytically coupled and electrically coupled to at least one of the anode or the cathode. Electrically coupled means directly or indirectly connected in series by wires, traces or other connecting elements. The average distance between the surface of the auxiliary electrode and the surface of the coupled cathode or the coupled anode is between about 1 micron and about 10,000 microns. The average distance means the average of the shortest path for ion transfer from every point on the coupled cathode or anode to the auxiliary electrode.
    Type: Application
    Filed: May 12, 2008
    Publication date: August 20, 2009
    Inventors: Murali Ramasubramanian, Robert M. Spotnitz
  • Patent number: 7569131
    Abstract: A method for multi-layer electrodeposition in a single bath is also provided. A substrate is immersed in a bath. An electrodeposition operation is initiated for depositing a first layer of material on the substrate. The electrodeposition operation includes agitating the bath and applying current pulses. The electrodeposition operation is later altered for depositing a second layer of material on the first layer, where the second layer is of a different composition than the first layer. In the altered mode, the current density is changed for altering a composition of material deposited on the substrate, the duration and/or frequency of the current pulses are altered, and the bath is agitated at a different rate of agitation.
    Type: Grant
    Filed: August 12, 2002
    Date of Patent: August 4, 2009
    Assignee: International Business Machines Corporation
    Inventors: April Dawn Hixon-Goldsmith, Matthew Walter Last, Murali Ramasubramanian, Rolf Beatus Schaefer
  • Patent number: 7534555
    Abstract: Method of plating using a polymeric barrier layer including a polyphenolic polymer which has a repeating unit of the formula: wherein R1, R2, R3, R4, and R5 are individually hydrogen, a hydroxy group or an azo dye.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: May 19, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Daniel W. Bedell, Gregory Breyta, Tom K. Harris, III, April D. Hixson-Goldsmith, Murali Ramasubramanian, Alfred Renaldo, Benjamin L. Wang
  • Publication number: 20080063594
    Abstract: Rhodium solutions, methods for plating structures using such rhodium solutions, and rhodium plated structures are described. The rhodium solutions can contain an increased concentration of rhodium in the form of a monomer sulfate salt. The rhodium solutions can be formed under conditions of controlled pH and controlled temperatures that increase the uniformity of the chemical composition from one rhodium solution to another. As a result, the shelf life of the rhodium solutions and plating baths using these rhodium solutions can be increased. Rhodium platings formed from these solutions can contain a low degree of dendrites, or even no dendrites. The rhodium platings can also exhibit less internal stress and can be less susceptible to cracking.
    Type: Application
    Filed: September 13, 2006
    Publication date: March 13, 2008
    Inventors: Michael J. Armstrong, Gregory M. Omweg, Murali Ramasubramanian
  • Patent number: 7340824
    Abstract: A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: March 11, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Michael Feldbaum, John I. Kim, Murali Ramasubramanian, Howard Gordon Zolla
  • Patent number: 7275306
    Abstract: An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: October 2, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Donald Giles Allen, Richard Jule Contreras, Michael Feldbaum, Murali Ramasubramanian
  • Patent number: 7263762
    Abstract: A method for reducing plated pole height loss in the formation of a write pole for a magnetic write head is disclosed. The method includes forming a conductive layer on a thin film substrate, forming a photoresist layer on the conductive layer and forming a trench in the photoresist layer. A thick seed layer is then placed on the trench and on the photoresist layer surface using a collimator. Moreover, the process includes plating while applying a voltage to the thin film substrate where the electrically isolated seed layer is removed and the trench is filled with plating material, removing the photoresist layer, and removing the exposed portions of the conductive layer on the thin film substrate.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: September 4, 2007
    Assignee: Hitachi Global Storage Technologies
    Inventors: Daniel Bedell, Jennifer A. Loo, Aron Pentek, Murali Ramasubramanian