Abstract: A transistor amplifier has an integral resistance-capacitance negative feedback network in order to stabilize it and allow a broadband impedance match. To minimize transmission line effects and phase shifts, the capacitor is formed using a control electrode pad as one capacitor plate and the control electrode has integral fingers. The resistor can be of the floating gate type for ease of construction. The transistor can be an FET.

Abstract: A process of forming sub-micrometer metallization structures on a substrate is provided. A layer of a photoresist on the structure is pattern irradiated with a reduced dosage of actinic radiation so that, upon development, recesses are formed therein which extend only partially through the photoresist layer. A first layer of metallization is deposited onto the structure at an oblique angle such that it does not completely coat the photoresist in the recesses. The structure is then flood irradiated with actinic light and developed to form openings to the substrate where the photoresist layer is not covered in the recesses. A second layer of metallization is then deposited at normal incidence. The second metallization breaks off and deposits isolated structures on the substrate through the openings. The photoresist layer and overlying layers of metallization are then removed by conventional lift-off technique.