Abstract: A readout circuit that allows on-chip bias calibration of a microbolometer focal plane array (FPA). The readout circuit includes a memory for storing one or more biasing values for a plurality of pixels within the FPA, the plurality of pixels being arranged in one or more columns and one or more rows within the FPA. The readout circuit further includes a column readout connected to the memory and configured to search for the one or more biasing values and to apply a bias adjustment based on the one or more biasing values to a signal received from the FPA. The readout circuit further includes a column multiplexer connected to the column readout and configured to perform dynamic column selection for one or more columns of pixels within the FPA.

Abstract: Methods, systems, and apparatus to manufacture a microbolometer detector in a standard CMOS foundry. The method includes forming a Complementary Metal Oxide Semiconductor (CMOS) wafer including a silicon substrate layer, a metal stack, a dielectric layer, and a thermoelectric conversion element embedded in the dielectric layer. The metal stack includes at least two metal layers in contact with each other. The metal stack and the dielectric layer are on the silicon substrate layer. The thermoelectric conversion element is configured to convert heat into an electrical signal. The method includes etching the metal stack to define exterior lateral edges of a microbolometer bridge including at least a portion of the dielectric layer and the thermoelectric conversion element embedded in the dielectric layer. The method includes etching the silicon substrate layer beneath the microbolometer bridge.

Abstract: Methods, systems, and apparatus to manufacture a microbolometer detector in a standard CMOS foundry. The method includes forming a Complementary Metal Oxide Semiconductor (CMOS) wafer including a silicon substrate layer, a metal stack, a dielectric layer, and a thermoelectric conversion element embedded in the dielectric layer. The metal stack includes at least two metal layers in contact with each other. The metal stack and the dielectric layer are on the silicon substrate layer. The thermoelectric conversion element is configured to convert heat into an electrical signal. The method includes etching the metal stack to define exterior lateral edges of a microbolometer bridge including at least a portion of the dielectric layer and the thermoelectric conversion element embedded in the dielectric layer. The method includes etching the silicon substrate layer beneath the microbolometer bridge.

Abstract: A readout circuit that allows on-chip bias calibration of a microbolometer focal plane array (FPA). The readout circuit includes a memory for storing one or more biasing values for a plurality of pixels within the FPA, the plurality of pixels being arranged in one or more columns and one or more rows within the FPA. The readout circuit further includes a column readout connected to the memory and configured to search for the one or more biasing values and to apply a bias adjustment based on the one or more biasing values to a signal received from the FPA. The readout circuit further includes a column multiplexer connected to the column readout and configured to perform dynamic column selection for one or more columns of pixels within the FPA.