Abstract: In a power transmitting device constituting a wireless power transmission system, a voltage generating circuit applies a voltage between an active electrode and a passive electrode. In a power receiving device, a voltage generated between an active electrode that is opposed to the active electrode, and a passive electrode that is opposed to or brought into contact with the passive electrode when the power receiving device is placed on the power transmitting device is inputted to a load circuit as a power supply voltage. Passive electrodes of the power transmitting device are provided to electrostatically shield the opposed active electrodes with respect to the earth. Consequently, a wireless power transmission system, a power transmitting device, and a power receiving device are configured so the potential of the power transmitting device and the power receiving device during power transmission is stabilized to thereby prevent malfunction of the power receiving device.

Abstract: An electronic component includes a multilayer body including insulating layers that are stacked on each other. First and second LC parallel resonators each include via hole conductors extending in a z-axis direction and loop shaped conductive layers provided on the insulating layers. The first and second LC parallel resonators define a band pass filter. A first loop plane of the first LC parallel resonator and a second loop plane of the second LC parallel resonator are parallel or substantially parallel to the z-axis direction, are parallel or substantially parallel to each other, and are overlapped with each other at at least a portion of the first loop plane and the second loop plane in a plan view from the direction perpendicular or substantially perpendicular to the first loop plane. The first loop plane protrudes from the second loop plane at the positive direction in the z-axis direction.

Abstract: An amplifier circuit includes first and second amplification units. A first detection electrode and a high impedance circuit are connected to the input terminal of the first amplification unit. A second detection electrode and a high impedance circuit are connected to the input terminal of the second amplification unit. The output terminals of the first and second amplification units output first and second output signals, and are connected to the input terminals of a differential amplifier circuit through coupling capacitors, respectively. The differential amplifier circuit operates a difference between the first and second output signals in a state where a direct-current component is omitted.

Abstract: A semiconductor component is face-up mounted on a package substrate. An antenna substrate is flip-chip mounted on a front side of the semiconductor component. A device-side high-frequency signal terminal is disposed on the front side of the semiconductor component, and an antenna-side high-frequency signal terminal is disposed on a back side of the antenna substrate. The device-side high-frequency signal terminal and the antenna-side high-frequency signal terminal are electrically connected to each other. Thus, the antenna substrate for high-frequency signals can be separated from the package substrate for baseband signals.

Abstract: In a method of manufacturing a piezoelectric device, a compressive stress film is formed on a back surface of a piezoelectric single crystal substrate opposite to a surface on an ion-implanted side. The compressive stress film compresses the surface on the ion-implanted side of the piezoelectric single crystal substrate. The compressive stress produced by the compressive stress film is applied to half of the piezoelectric single crystal substrate on the ion-implanted side with respect to the center line of the thickness of the piezoelectric single crystal substrate to prevent the piezoelectric single crystal substrate from warping. A supporting substrate is then bonded to the surface of a bonding film on the flat piezoelectric single crystal substrate. The joined body of the piezoelectric single crystal substrate and the supporting substrate is then heated to initiate isolation at the ion-implanted portion as the isolation plane.

Abstract: A boundary acoustic wave device includes an LiTaO3 piezoelectric substrate3, a first dielectric medium layer disposed on the piezoelectric substrate, a second dielectric medium layer disposed on the first medium layer and having a sound velocity different from the first medium layer, and an interdigital electrode disposed at the boundary between the piezoelectric substrate and the first medium layer. The sound velocity of the first medium layer is less than the sound velocity of LiTaO3. The sound velocity of the second medium layer is greater than the sound velocity of LiTaO3. The inequality (h/?)×a?0.05 is satisfied, where H is the thickness of the first medium layer, h is the thickness of the interdigital electrode, ? is the period of electrode fingers of the interdigital electrode, and a is the ratio of the density of a metal of the interdigital electrode to the density of Au.

Abstract: An antenna includes antenna coil having a magnetic-material core and a coil conductor. The antenna coil is arranged toward a side of a planar conductor, such as a circuit board. Of the coil conductor, a first conductor part close to a first main face of the magnetic-material core and a second conductor part close to a second main face of the magnetic-material core are provided such that the first conductor part is not over the second conductor part in view from a line in a direction normal to the first main face or the second main face of the magnetic-material core. In addition, a coil axis of the coil conductor is orthogonal to the side of the planar conductor.

Abstract: In a semiconductor device including a semiconductor element that produces heat and a substrate on which the semiconductor element is mounted, functions of the substrate are divided between a heat dissipating substrate and a wiring substrate. The heat dissipating substrate has a relatively high thermal conductivity, and includes principal surfaces defined by electric insulators, one of which is provided with an outer conductor located thereon. The wiring substrate is mounted on the upper principal surface of the heat dissipating substrate, has a thermal conductivity lower than that of the heat dissipating substrate, and includes a wiring conductor made mainly of silver or copper and located inside the wiring substrate, the wiring conductor being electrically connected to the outer conductor. The semiconductor element is mounted on the upper principal surface of the heat dissipating substrate and disposed in a through hole of the wiring substrate.

Abstract: A ceramic multilayer substrate includes stacked ceramic layers; internal conductors which are stacked with one of the ceramic layers therebetween, and are arranged such that at least a portion of the internal conductors overlap each other in a stacking direction; and a constraining layer which is arranged on a layer different from layers on which the internal conductors are located. The constraining layer overlaps, in the stacking direction, an internal conductor-overlapping region where at least two of the internal conductors overlapping each other in the stacking direction, has a planar area not more than twice the planar area of the internal conductor-overlapping region, and contains an unsintered inorganic material powder. The constraining layer has a planar area not more than one-half the planar area of the ceramic layers. The constraining layer is arranged so as to entirely cover the internal conductor-overlapping region.

Abstract: A thermoelectric conversion element includes a p-type metal thermoelectric conversion material containing a metal as its main constituent, an n-type oxide thermoelectric conversion material containing an oxide as its main constituent, and a composite oxide insulating material containing a composite oxide as its main constituent. The p-type metal thermoelectric conversion material and the n-type oxide thermoelectric conversion material are directly bonded in a region of a junction plane between the p-type metal thermoelectric conversion material and the n-type oxide thermoelectric conversion material, and the p-type metal thermoelectric conversion material and the n-type oxide thermoelectric conversion material are bonded to each other with the composite oxide insulating material interposed therebetween so as to define a pn conjunction pair in the other region of the junction plane. A perovskite-type oxide is used as the n-type oxide thermoelectric conversion material.

Abstract: A dynamic sensor includes a weight having an H shape in a plan view. The weight includes a first weight portion and a second weight portion which have substantially rectangular parallelepiped shapes and are aligned in a short side direction at an interval and a bridge portion which connects the first and second weight portions and extends in the aligned direction. The bridge portion connects the first and second weight portions at an approximate center thereof in a long side direction. Supports are located in a region between the first and second weight portions where the bridge portion is not provided. The first weight portion is connected to a first support via a first beam and to a second support via a second beam. The second weight portion is connected to the first support via a third beam and to the second support via a fourth beam.

Abstract: An acceleration sensor with improved impact resistance includes a beam portion connected to a supporting portion at a base side and connected to a weight portion at a top side. The beam portion has a T-shaped cross-section, and piezoresistors are located on an upper surface of the beam portion. The weight portion connects to a top of the beam portion and is arranged inside the supporting portion. A C-shaped slit is provided between the weight portion and the supporting portion so as to surround the weight portion. The weight portion includes an extended portion in which an end of a top surface layer on a side facing the beam portion extends out toward the beam portion beyond an end of the supporting substrate layer on a side facing the beam portion.

Abstract: In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.

Abstract: A circuit substrate on which a duplexer is mounted includes a substrate body. First, second and third external electrodes are provided on a first main surface of the substrate body. Fourth, fifth and sixth external electrodes are provided on a second main surface of the substrate body. First, second and third signal paths connect the first, second and third external electrodes to the fourth, fifth and sixth external electrodes, respectively. First and second ground conductors are embedded in the substrate body, and overlap with a mounting area so as to contain the mounting area where the duplexer is mounted, in a planar view seen from the z-axis direction. The first, second and third signal paths extend from the inside of the mounting area to the outside of the mounting area between the first main surface and the second ground conductor.

Abstract: A laminated ceramic capacitor with a laminated body including a plurality of stacked ceramic layers and internal electrodes located between the ceramic layers. The laminated body has a pair of mutually opposed principal surfaces extending in the direction in which the ceramic layers extend, a pair of mutually opposed side surfaces and a pair of mutually opposed end surfaces which respectively extend in directions orthogonal to the principal surfaces. The internal electrodes are 0.4 ?m or less in thickness, and are located in an area defined by a width-direction gap of 30 ?m or less interposed with respect to each of the pair of side surfaces and an outer layer thickness of 35 ?m or less interposed with respect to each of the pair of principal surfaces.

Abstract: A power stage includes an input voltage source; an inductor including first and second windings, where the first winding is connected to the input voltage source and where the second winding is magnetically coupled to the first winding; an output capacitor; a first diode connected to the first winding; a second diode connected between the second winding and the output capacitor; a boost switch connected to the first winding; and a control switch connected between the first diode and the output capacitor. The control switch is arranged to actively control inrush current during start-up of the power stage. A method of controlling inrush current of a boost power stage includes actively controlling the inrush current of the power stage by controlling a control switch through which the inrush current during start-up flows.

Abstract: Provided is an electronic component that can suppress the occurrence of disconnections between line conductor layers and via hole conductors and a method of manufacturing the electronic component. A multilayer body is formed by stacking insulating layers. A conductor layer is provided on a first insulating layer. A line conductor layer is provided on a second insulating layer that is provided on an upper side of the first insulating layer in a stacking (z-axis) direction. A via hole conductor connects an end portion of the line conductor layer to the conductor layer and extends through the second insulating layer in the z-axis direction. In the via hole conductor, a connection surface connected to the line conductor layer is formed of a circular portion and a protrusion. The protrusion protrudes from the circular portion in the x-axis direction in which the line conductor layer extends from the end portion.

Abstract: The present invention provides a measuring method comprising the steps of holding a specimen on a flat-plate periodic structure, applying a linearly-polarized electromagnetic wave to the periodic structure, and measuring characteristics of the specimen based on change of the electromagnetic wave scattered forward or backward by the periodic structure, wherein the periodic structure is structured such that plural unit structures having the same shape are two-dimensionally and periodically interconnected in a direction of one reference plane, the unit structure has at least one aperture penetrating therethrough in a direction perpendicular to the reference plane, the electromagnetic wave is applied from a direction perpendicular to the reference plane, and the unit structure has a shape that is not mirror-symmetric with respect to an imaginary plane orthogonal to a polarizing direction of the electromagnetic wave.

Abstract: A piezoelectric speaker device that includes an insulation layer having an electric insulation property formed on a user-side driving electrode, and flaw detection electrode lines formed on the insulation layer. If the flaw detection electrode lines are determined to be damaged due to the occurrence of a flaw, the driving voltage applied to the driving electrodes is lowered. In order to prevent electric-shock accidents, the driving voltage is lowered to below 42.4 V, preferably, and to 0 V, more preferably.

Abstract: The electronic component has a resin electrode which constitutes an external electrode on a face of a ceramic base body. At least a tip portion of a resin electrode region extended around another face of the body is bonded to the ceramic base body, and further a relationship between Rz1 and Rz2 satisfies the following requirement: Rz1>Rz2, Rz1>3.3 ?m, and Rz2<3.2 ?m, wherein Rz1 is a ten-point average surface roughness of a first region of a surface of the ceramic base body to which the tip portion is bonded, and Rz2 is a ten-point average surface roughness of a second region of the surface of the ceramic base body where the external electrode is not formed.