Abstract: A method is provided for making a high definition, high aspect ratio amorphous carbon element, such as a slider, which carries one or more magnetic heads in a disk drive. A special gaseous environment is provided during laser etching which results in virtually no redeposition of the etched material. The result is a carbon element which has good edge definition for establishing desirable flying characteristics of a slider. In a preferred embodiment the laser etching, which is preferably implemented by an excimer laser, is performed in an gaseous environment of oxygen saturated with water vapor at a pressure above ambient. Significant improvements were also realized with nitrogen saturated with water vapor at a pressure above ambient and steam at ambient pressure. High aspect ratios were achieved, namely slope angles of 50.degree. to 60.degree..

Abstract: The invention is a method for detecting both surface topography and defect presence using an AC interferometer. Surface topography measurements are maximized by adjusting the signal voltage of the light modulator to a relative phase-sensitive value. Defect detection is maximized by adjusting the signal voltage of the light modulator to a relatively phase-insensitive value. This method not only allows for heretofore unknown defect detection by an AC interferometer but, because the signal voltage can be switched electronically, permits both observations to be taken at a high speed and for many points of a specimen, thereby making the method suitable for the manufacturing environment. More specifically, the method would be applicable to both optical disk and microchip manufacturing.

Abstract: An infrared Fourier transform spectrometer is used to measure the absorbance spectrum of a sample of unknown oxygen or carbon content. From the spectrum, the roughness of the wafer is defined, and such roughness definition is then used to calculate the oxygen or carbon content. The roughness can be defined by using the slope of the absorbance spectrum or by the degree of shift of the baseline of the oxygen or carbon peak.

Abstract: A new spectrometer station for semiconductor wafers is provided that permits operation in both the reflective and absorption modes either simultaneously or sequentially while the wafer is in a horizontal position. The wafer is positioned in the station on a movable platform. Positioned under the platform is an infrared detector. An optical system over the platform focuses an interferometer beam at that portion of the wafer positioned right over the detector. It also directs light from the beam reflected off the top surface of the wafer at a second infrared detector. An orientor rotates the wafer on the platform so that movement of the wafer by the orientor and movement of the platform allows any part of the wafer to be examined as a test point by the spectrometer.

Abstract: The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.