Patents by Inventor Murray A. Polinsky

Murray A. Polinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a bipolar transistor with high-low emitter impurity concentration
    Patent number: 4178190
    Abstract: An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region.
    Type: Grant
    Filed: October 10, 1978
    Date of Patent: December 11, 1979
    Assignee: RCA Corporation
    Inventor: Murray A. Polinsky
  • Nonvolatile semiconductive memory device and method of its manufacture
    Patent number: 4151538
    Abstract: An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the devide, so as to increase the threshold voltage window of the device. The region is formed by ion implantation in such a manner that the thin gate insulator layer is also doped resulting in a device having improved stability.
    Type: Grant
    Filed: January 30, 1978
    Date of Patent: April 24, 1979
    Assignee: RCA Corp.
    Inventors: Murray A. Polinsky, William N. Lewis
  • Bipolar transistor with high-low emitter impurity concentration
    Patent number: 4136353
    Abstract: An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region.
    Type: Grant
    Filed: May 23, 1977
    Date of Patent: January 23, 1979
    Assignee: RCA Corporation
    Inventor: Murray A. Polinsky