Patents by Inventor Murray H. Kalisher

Murray H. Kalisher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for growing HgCdTe base and contact layer in one operation
    Patent number: 5512511
    Abstract: A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the steps of providing an LPE growth chamber that contains a molten Group II-VI semiconductor material 24, the molten Group II-VI semiconductor material having a first temperature (T.sub.1); growing, at the first temperature, a base layer (22) from the molten Group II-VI semiconductor material, the base layer being grown to have a first bandgap energy; employing a shutter mechanism (30) to isolate the base layer from the molten Group II-VI semiconductor material without removing the base layer from the growth chamber; reducing the first temperature of the molten Group II-VI semiconductor material to a second temperature (T.sub.
    Type: Grant
    Filed: May 24, 1994
    Date of Patent: April 30, 1996
    Assignee: Santa Barbara Research Center
    Inventor: Murray H. Kalisher
  • Method and apparatus for growing films on a substrate
    Patent number: 4946543
    Abstract: A method and apparatus for growing films on a plurality of substrates is disclosed. The apparatus includes a substrate rack for securing a plurality of substrates on a predetermined position. An ampoule is also provided which environmentally isolates the substrates. The ampoule includes first and second reservoirs for storing source material at opposite ends of ends of the ampoule.
    Type: Grant
    Filed: March 29, 1988
    Date of Patent: August 7, 1990
    Inventors: Murray H. Kalisher, Paul E. Herning