Abstract: The invention relates to a spreader for use on a delivery tube of a seeding tool. The spreader is mounted for adjustable positioning in the product stream providing a selectable width of product scatter. The invention preferably includes a tapered deflecting surface with a convex laterally angled surfaces for achieving an even scatter pattern, especially over the varying scatter widths. The deflecting surface is pivoted or advanced into the product stream to change the breadth of surface struck by the product as a result causing different scatter patterns. In a preferred embodiment the spreader includes a channel for mounting onto the delivery tube with a pivot pin pivotally securing it adjacent the outlet and selectively adjustable securing points for angular adjustment. The spreading deflecting surface is separated from the outlet in the direction of product stream so that deflected product is not shielded by the delivery tube.

Abstract: An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the device so as to increase the threshold voltage window of the device.

Abstract: A Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions and a gate structure located over the interstitial channel portion of the semiconductor body, between the source and drain regions. A stepped or dual thickness oxide layer, having one portion of minimum thickness formed over only a portion of the channel region and another portion of maximum thickness formed over the remaining portion of the channel region. This stepped oxide layer, together with the gate electrode, forms the gate structure. That portion of the channel region covered by the portion of minimum thickness oxide is separated from the drain region, and the portion of maximum thickness oxide is also located over both a portion of the drain region and that portion of the channel region adjacent the drain region.

Abstract: A body of semiconductor material having a layer of an oxide on a surface thereof is subjected to a negative corona discharge in air to deposit a negative charge on the outer surface of the oxide. This results in an immobile positive charge at the interface between the oxide layer and the semiconductor body. The amount of this positive charge, which can be measured by standard MOS capacitance measurements, indicates the radiation hardness of the device.