Abstract: A method of making inkjet print heads may include forming recesses in a first surface of a first wafer to define inkjet chambers. The method may also include forming openings extending from a second surface of the first wafer through to respective ones of the inkjet chambers to define inkjet orifices. The method may further include forming a second wafer including ink heaters, and joining the first and second wafers together so that the ink heaters are aligned within respective inkjet chambers to thereby define the inkjet print heads.

Abstract: A method of making inkjet print heads may include forming recesses in a first surface of a first wafer to define inkjet chambers. The method may also include forming openings extending from a second surface of the first wafer through to respective ones of the inkjet chambers to define inkjet orifices. The method may further include forming a second wafer including ink heaters, and joining the first and second wafers together so that the ink heaters are aligned within respective inkjet chambers to thereby define the inkjet print heads.

Abstract: A method of making inkjet print heads may include forming recesses in a first surface of a first wafer to define inkjet chambers. The method may also include forming openings extending from a second surface of the first wafer through to respective ones of the inkjet chambers to define inkjet orifices. The method may further include forming a second wafer including ink heaters, and joining the first and second wafers together so that the ink heaters are aligned within respective inkjet chambers to thereby define the inkjet print heads.

Abstract: In an embodiment, to deter or delay counterfeiting/cloning of a replacement component of a host device, the replacement component is provided with a code value. The code value is generated from a value of at least one physical parameter of the replacement component and is stored on the replacement component. The host device determines whether the replacement component is authentic if the stored code value matches a reference code value.

Abstract: A method of making inkjet print heads may include forming recesses in a first surface of a first wafer to define inkjet chambers. The method may also include forming openings extending from a second surface of the first wafer through to respective ones of the inkjet chambers to define inkjet orifices. The method may further include forming a second wafer including ink heaters, and joining the first and second wafers together so that the ink heaters are aligned within respective inkjet chambers to thereby define the inkjet print heads.

Abstract: A method of making inkjet print heads may include forming recesses in a first surface of a first wafer to define inkjet chambers. The method may also include forming openings extending from a second surface of the first wafer through to respective ones of the inkjet chambers to define inkjet orifices. The method may further include forming a second wafer including ink heaters, and joining the first and second wafers together so that the ink heaters are aligned within respective inkjet chambers to thereby define the inkjet print heads.

Abstract: A method of making inkjet print heads may include forming recesses in a first surface of a first wafer to define inkjet chambers. The method may also include forming openings extending from a second surface of the first wafer through to respective ones of the inkjet chambers to define inkjet orifices. The method may further include forming a second wafer including ink heaters, and joining the first and second wafers together so that the ink heaters are aligned within respective inkjet chambers to thereby define the inkjet print heads.

Abstract: In an embodiment, to deter or delay counterfeiting/cloning of a replacement component of a host device, the replacement component is provided with a code value. The code value is generated from a value of at least one physical parameter of the replacement component and is stored on the replacement component. The host device determines whether the replacement component is authentic if the stored code value matches a reference code value.

Abstract: An improved Schottky transistor structure (6), including a bipolar transistor structure (7) and a Schottky diode structure (8), is formed by retrograde diffusing relatively fast diffusing atoms to form a localized retrograde diode well (9) as the substrate for the Schottky diode structure. An expanded buried collector layer (11) formed of relatively slow diffusing atoms underlies the base and collector regions of the bipolar transistor structure (7) and the retrograde diode well (9). A diode junction (10) is formed by expanding the base contact of the bipolar transistor structure to include the surface of the retrograde diode well. Preferably, the diode junction is a Platinum-Silicide junction.

Abstract: A lateral PNP transistor structure is fabricated in a BICMOS process utilizing the same steps as are used during the BICMOS process for fabricating NPN and CMOS transistors without requiring additional steps. A base N+ buried layer B/N+BL formed in the IC substrate P/SUB underlies the bipolar PNP transistor. A base Retro NWELL B/NWELL and a base contact Retro NWELL BC/NWELL are formed in the base N+ buried layer B/N+BL using the CMOS Retro NWELL mask, etch and N type introduction sequence. An epitaxial layer EPI of undoped or low doped EPI is deposited across the IC substrate and isolation oxide regions ISOX isolating the PNP transistor are grown during the isolation oxide ISOX mask, etch and grow sequence. The NPN collector sink definition mask, etch and N type introduction sequence is used to form a PNP base contact N+ sink region BC/N+SINK to the BC/NWELL and B/N+BL.

Abstract: An improved Schottky diode structure (4) is formed by retrograde diffusing an N.sup.+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried diode layer (5) formed of relatively slow diffusing N type atoms, preferably Antimony atoms, underlies the diode NWell and electrically couples the diode junction (7) to the diode ohmic contact (9). A diode ohmic contact region (31) underlies the ohmic contact, further coupling the diode junction to the ohmic contact. Preferably, the diode junction is a Platinum-Silicide junction.

Abstract: An improved Schottky diode structure (4) is formed by retrograde diffusing an N.sup.+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried diode layer (5) formed of relatively slow diffusing N type atoms, preferably Antimony atoms, underlies the diode NWell and electrically couples the diode junction (7) to the diode ohmic contact (9). A diode ohmic contact region (31) underlies the ohmic contact, further coupling the diode junction to the ohmic contact. Preferably, the diode junction is a Platinum-Silicide junction.

Abstract: A slotted metallic die attach pad is disclosed for attachment of a semiconductor die, such as a silicon die, to form a die assembly demonstrating significantly reduced die attach stress. A plurality of substantially parallel, unidirectional slots in the die attach pad permits deformation of the die attach pad at the slots to compensate for differences in the thermal expansion coefficients of the silicon die and the metallic die attach pad. Stress sensitive components of the die are aligned in a stress sensitive direction, and the die is bonded on the die attach pad so that the stress sensitive direction is generally orthongonal to the longitudinal axes of the slots. A method for relieving die stress in a die assembly is also disclosed.

Abstract: A slotted metallic die attach pad is disclosed for attachment of a semiconductor die, such as a silicon die, to form a die assembly demonstrating significantly reduced die attach stress. A plurality of substantially parallel, unidirectional slots in the die attach pad permits deformation of the die attach pad at the slots to compensate for differences in the thermal expansion coefficients of the silicon die and the metallic die attach pad. Stress sensitive components of the die are aligned in a stress sensitive direction, and the die is bonded on the die attach pad so that the stress sensitive direction is generally orthogonal to the longitudinal axes of the slots. A method for relieving die stress in a die assembly is also disclosed.