Patents by Inventor Murun Li

Murun Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitive pressure difference sensor with improved bonding and manufacturing method
    Patent number: 11788914
    Abstract: Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.
    Type: Grant
    Filed: February 14, 2023
    Date of Patent: October 17, 2023
    Assignees: LANGFANG ZHICHI POWER TECHNOLOGY LTD., BEIHANG UNIVERSITY
    Inventors: Tiantong Xu, Haiwang Li, Zhi Tao, Xiaoda Cao, Yanxin Zhai, Chunhui Yang, Haonan Lu, Di An, Hengyi Wang, Zhiyang Wang, Kaiyun Zhu, Weidong Fang, Wenbin Wang, Kaibo Lei, Wensong Xiao, Murun Li, Xiao Zhang, Yang Feng
  • CAPACITIVE PRESSURE DIFFERENCE SENSOR, AND MANUFACTURING METHOD AND APPLICATION THEREOF
    Publication number: 20230258521
    Abstract: Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.
    Type: Application
    Filed: February 14, 2023
    Publication date: August 17, 2023
    Inventors: Tiantong Xu, Haiwang Li, Zhi Tao, Xiaoda Cao, Yanxin Zhai, Chunhui Yang, Haonan Lu, Di An, Zhiyang Wang, Hengyi Wang, Kaiyun Zhu, Weidong Fang, Wenbin Wang, Kaibo Lei, Wensong Xiao, Murun Li, Xiao Zhang, Yang Feng