Abstract: A dual band infrared imaging system self-contained to fit within a small spacecraft is provided. The imaging system uses a detector array cooled by a mini cryocooler, and includes telescope optics and two bandpass filters for fire detection and thermal and evapotranspiration Earth science.

Abstract: A dual band infrared imaging system self-contained to fit within a small spacecraft is provided. The imaging system uses a detector array cooled by a mini cryocooler, and includes telescope optics and two bandpass filters for fire detection and thermal and evapotranspiration Earth science.

Abstract: A multi-channel electronic visual aid device which is able to signal to the user whether sound is coming from the left or right, front or back, or both. For the plurality of channels, which may operate in pairs, the sound is picked up by a respective microphone and amplified and rectified into a DC voltage. The DC voltage is next fed to an analog to digital converter and then to a digital encoder. The binary code from the encoder is coupled into a logic circuit where the binary code is decoded to provide a plurality of output levels which are used to drive an indicator which, in turn, provides a visual indication of the sound level received. The binary codes for each pair of channels are also fed into a digital comparator.

Abstract: An infrared photo-responsive element (R.sub.D) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device (10) by depositing a layer of a lead chalcogenide as a photo-resistive element forming an ohmic bridge between two metallization strips (26, 28) serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

Abstract: A fully implantable and self-contained device is disclosed composed of a flexible electrode array 10 for surrounding damaged nerves and a signal generator 12 for driving the electrode array with periodic electrical impulses of nanoampere magnitude to induce regeneration of the damaged nerves.

Abstract: A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.

Abstract: A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by: (1) forming a double diffusion along one edge of a V groove, or (2) ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.