Abstract: Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.

Abstract: Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.

Abstract: Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.

Abstract: MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo).

Abstract: MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo).

Abstract: Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.

Abstract: Methods for fabricating magnetic sensor heads using a CMP defined hard bias to fabricate a magnetic sensor head reader with a flat reader gap. The method comprises defining a read sensor of the magnetic sensor head. The method further comprises depositing an insulator layer on the read sensor. The method further comprises performing a chemical mechanical polishing (CMP) process down to a protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the hard bias layer above the protective layer and to remove a sensor pattern masking layer above the protective layer.

Abstract: In one particular example, a plurality of CPP type sensor layers are formed over a wafer and a mask without undercuts is formed over the plurality of CPP type sensor layers in a central region. With the mask without undercuts in place, an ion milling process is started to remove CPP type sensor layer materials left exposed by the mask without undercuts in end regions which surround the central region. The ion milling process is stopped at or near a spacer layer of the CPP type sensor layers. Insulator materials are then deposited in the end regions where the CPP type sensor layer materials were removed, followed by hard bias materials over the insulator materials. The mask without undercuts is then removed through use of a chemical-mechanical polishing (CMP) assisted lift-off process, which also planarizes the top surface.

Abstract: A capping layer employed with a spin valve sensor includes a first capping layer, formed from a refractory metal, and a second capping layer formed from silicon. The interface between the refactory metal layer and the silicon layer form a silicide that provides a large compressive stress on the underlying spin valve sensor. The compressive stress, advantageously, increases the pinning field in the self-pinned pinned layer structure, while providing a high resistivity so that less sense current is shunted by the capping layer structure compared to an all metal capping layer structure that provides a comparable compressive stress.