Abstract: A disturb mitigation scheme is described for a 1TnC or multi-element ferroelectric gain bit-cell where after writing to a selected capacitor of the bit-cell, a cure phase is initiated. Between the cure phase and the write phase, there may be zero or more cycles where the selected word-line, bit-line, and plate-lines are pulled-down to ground. The cure phase may occur immediately before the write phase. In the cure phase, the word-line is asserted again just like in the write phase. In the cure phase, the voltage on bit-line is inverted compared to the voltage on the bit-line in the write phase. By programming a value in a selected capacitor to be opposite of the value written in the write phase of that selected capacitor, time accumulation of disturb is negated. This allows to substantially zero out disturb field on the unselected capacitors of the same bit-cell and/or other unselected bit-cells.

Abstract: Technologies directed to a receiver circuit with selective time-interleaved analog-to-digital converters (ADCs) are described. The receiver circuit includes a first ADC, a second ADC, and a digital processing circuit coupled to the first ADC and second ADC that operates in a first mode or a second mode. In the first mode the first ADC receives a first signal and generates first samples at a first sampling frequency. The digital processing circuit processes the first samples. In the second mode, the first ADC and the second ADC both receive a second signal and collectively generate second samples at a second sampling frequency that is greater than the first sampling frequency. The digital processing circuit processes the second samples.