Abstract: A capacitor has a MOS gate structure in which a gate insulating film is held between a gate terminal and a ground terminal as a dielectric. A switch unit is connected between the gate terminal and a power supply. The ground terminal is connected to a ground. A switch control circuit that switches a state of the switch unit between a conductive state and a nonconductive state is provided. A predetermined voltage and a voltage of the gate terminal are input to a non-inverting input terminal and an inverting input terminal of the switch control circuit, respectively. The switch unit is conductive when the voltage of the gate terminal is higher than the predetermined voltage, and nonconductive when the voltage of the gate terminal is lower than the predetermined voltage.

Abstract: A multilayer interconnection structure of a semiconductor device includes a first guard ring extending continuously along a periphery of a substrate and a second guard ring extending continuously in the multilayer interconnection structure along the periphery so as to be encircled by the first guard ring and so as to encircle an interconnection pattern inside the multilayer interconnection structure, wherein the first and second guard rings are connected with each other mechanically and continuously by a bridging conductor pattern extending continuously in a band form along a region including the first and second guard rings when viewed in the direction perpendicular to the substrate.

Abstract: A multilayer interconnection structure of a semiconductor device includes a first guard ring extending continuously along a periphery of a substrate and a second guard ring extending continuously in the multilayer interconnection structure along the periphery so as to be encircled by the first guard ring and so as to encircle an interconnection pattern inside the multilayer interconnection structure, wherein the first and second guard rings are connected with each other mechanically and continuously by a bridging conductor pattern extending continuously in a band form along a region including the first and second guard rings when viewed in the direction perpendicular to the substrate.

Abstract: A capacitor has a MOS gate structure in which a gate insulating film is held between a gate terminal and a ground terminal as a dielectric. A switch unit is connected between the gate terminal and a power supply. The ground terminal is connected to a ground. A switch control circuit that switches a state of the switch unit between a conductive state and a nonconductive state is provided. A predetermined voltage and a voltage of the gate terminal are input to a non-inverting input terminal and an inverting input terminal of the switch control circuit, respectively. The switch unit is conductive when the voltage of the gate terminal is higher than the predetermined voltage, and nonconductive when the voltage of the gate terminal is lower than the predetermined voltage.

Abstract: A multilayer interconnection structure of a semiconductor device includes a first guard ring extending continuously along a periphery of a substrate and a second guard ring extending continuously in the multilayer interconnection structure along the periphery so as to be encircled by the first guard ring and so as to encircle an interconnection pattern inside the multilayer interconnection structure, wherein the first and second guard rings are connected with each other mechanically and continuously by a bridging conductor pattern extending continuously in a band form along a region including the first and second guard rings when viewed in the direction perpendicular to the substrate.

Abstract: Semiconductor chips mounted in a laminated manner on a substrate and a semiconductor integrated circuit device using the semiconductor chips. A predetermined semiconductor chip is selected by chip selection signals from an external unit despite the chips having the same wiring pattern are laminated in a plural number one upon the other. The semiconductor integrated circuit device is fabricated by using such semiconductor chips.

Abstract: Semiconductor chips mounted in a laminated manner on a substrate and a semiconductor integrated circuit device using the semiconductor chips. A predetermined semiconductor chip is selected by chip selection signals from an external unit despite the chips having the same wiring pattern are laminated in a plural number one upon the other. The semiconductor integrated circuit device is fabricated by using such semiconductor chips.