Patents by Inventor Mutsukazu Kamo

Mutsukazu Kamo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5961717
    Abstract: A synthesis of phosphorus-doped diamond by a microwave plasma method using a volatile hydrocarbon and hydrogen mixed therewith, as a reaction gas, wherein phosphorus is used as a dopant, and hydrogen bonded to the phosphorus is dissociated so that the phosphorus is introduced into diamond as an impurity without being bonded to hydrogen.
    Type: Grant
    Filed: January 31, 1997
    Date of Patent: October 5, 1999
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Mutsukazu Kamo, Satoshi Koizumi, Hiroyuki Ozaki
  • Patent number: 4989542
    Abstract: An apparatus for synthesizing diamond, which comprises a reaction chamber, a means for supplying to the reaction chamber a gas mixture comprising a hydrogen gas and an organic compound decomposable by a plasma to form a diamond or a gas mixture comprising a hydrogen gas, an inert gas and said organic compound, a means of conducting a microwave of frequency larger than 300 MHz to the reaction chamber to generate a microwave plasma in the gas mixture and a substrate held by a substrate holder to locate in the microwave plasma and on which diamond is to be formed, wherein the microwave conducting means is designed to introduce the microwave to the reaction chamber from a plurality of directions.
    Type: Grant
    Filed: May 24, 1988
    Date of Patent: February 5, 1991
    Assignee: National Institute for Research in Inorganic Materials
    Inventor: Mutsukazu Kamo
  • Patent number: 4957591
    Abstract: A method for preparing needle-like, fibrous or porous diamond, or an aggregate thereof, which comprises subjecting diamond synthesized by a chemical vapor deposition method or a plasma-assisted vapor deposition method, or a film of such diamond, to plasma treatment in a gas stream containing oxygen, carbon dioxide, steam, hydrogen, a halogenated hydrocarbon or a halogenated carbon, or to thermal oxidation treatment in a gas stream containing oxygen, carbon dioxide or steam, for etching.
    Type: Grant
    Filed: December 9, 1988
    Date of Patent: September 18, 1990
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Yoichiro Sato, Mutsukazu Kamo, Chiemi Hata
  • Patent number: 4434188
    Abstract: A method for synthesizing diamond wherein hydrogen gas which has passed through a micro-wave non-electrode discharge and mixed with hydrocarbon gas, or a mixture gas consisting of hydrocarbon and hydrogen after its passing through a micro-wave non-electrode discharge, is introduced onto the surface of a substrate heated to a temperature of from 300.degree. to 1300.degree. C. to decompose hydrocarbon in its energetically activated state for the diamond deposition.
    Type: Grant
    Filed: November 17, 1982
    Date of Patent: February 28, 1984
    Assignee: National Institute for Researches in Inorganic Materials
    Inventors: Mutsukazu Kamo, Seiichiro Matsumoto, Yoichiro Sato, Nobuo Setaka