Abstract: A thin film has a band gap of 2.2 eV or more and in which a crystal includes an atomic vacancy and an electron, a microwave irradiation system configured to irradiate the thin film with a microwave in response to driving from outside, an excitation unit configured to excite the electron included in the thin film in response to driving from outside, and a detector configured to detect, as an electric signal, at least either one of an intensity of light outputted from the thin film when the electron transitions from an excited state to a ground state and a change in conductivity of the thin film based on excitation.

Abstract: A sensor includes two magnetic sensors detecting a magnetic field around an object, and outputting at least one of a magnetic field signal and a temperature signal, an optical system emitting the excitation light to the two magnetic sensors, and a processor calculating a difference between a magnetic fields corresponding to the magnetic field signal detected by the two magnetic sensors, wherein each of the magnetic sensors includes an element disposed around the object and having color centers, an antenna radiating a microwave magnetic field to the element, an optical sensor detecting an intensity of a fluorescence generated by the element, and outputting an intensity signal, and a controller calculating at least one of a magnetic field and temperature around the measurement object, and output at least one of a magnetic field signal indicating the calculated magnetic field and a temperature signal indicating the calculated temperature to the processor.

Abstract: A physical state measurement apparatus includes a main solid material which generates fluorescence by excitation light from a light source part. A microwave application part applies microwaves to the main solid material so as to control an electron state of the main solid material. A detection part detects the physical state of an object to be measured by the fluorescence from the main solid material. A feedback part has a solid material for feedback and a control part and detects a difference in amplitude between operating points on a low-frequency side and a high-frequency side of a lowering portion of a spectrum amplitude centered on a resonance frequency of an electron spin resonance spectrum of fluorescence from the solid material for feedback and feedback-controls the microwave application part such that the difference becomes zero.

Abstract: A magnetic measuring device includes: a determination part configured to identify four maximum inclination points in an average value in a visual field of a light detection magnetic resonance spectrum and configured to determined a degree of decrease in relative fluorescence intensity and a microwave frequency at each of the maximum inclination points; a setting part configured to set a reference decrease degree of the relative fluorescence intensity in a predetermined area and configured to set operating point frequency initial values at four points at which the reference decrease degree is achieved, near the microwave frequencies at the respective maximum inclination points; a frequency update part configured to update operating point frequencies at the four points; and a frequency correction part configured to input the updated operating point frequencies to a microwave oscillator as corrected operating point frequencies.

Abstract: A thin film has a band gap of 2.2 eV or more and in which a crystal includes an atomic vacancy and an electron, a microwave irradiation system configured to irradiate the thin film with a microwave in response to driving from outside, an excitation unit configured to excite the electron included in the thin film in response to driving from outside, and a detector configured to detect, as an electric signal, at least either one of an intensity of light outputted from the thin film when the electron transitions from an excited state to a ground state and a change in conductivity of the thin film based on excitation.

Abstract: A magnetic measuring device includes: a determination part configured to identify four maximum inclination points in an average value in a visual field of a light detection magnetic resonance spectrum and configured to determined a degree of decrease in relative fluorescence intensity and a microwave frequency at each of the maximum inclination points; a setting part configured to set a reference decrease degree of the relative fluorescence intensity in a predetermined area and configured to set operating point frequency initial values at four points at which the reference decrease degree is achieved, near the microwave frequencies at the respective maximum inclination points; a frequency update part configured to update operating point frequencies at the four points; and a frequency correction part configured to input the updated operating point frequencies to a microwave oscillator as corrected operating point frequencies.

Abstract: A diamond crystal according to the present invention has an NV region containing a complex (NV center) of nitrogen substituted with a carbon atom and a vacancy located adjacent to the nitrogen, on a surface or in the vicinity of the surface, wherein the NV region has a donor concentration equal to or higher than the concentration of the NV centers, or a crystal of the NV region is a {111} face or a face having an off-angle that is ±10 degrees or less against the {111} face, and a principal axis of the NV center is a <111> axis that is perpendicular to the {111} face. Such a diamond crystal enables almost 100% of the NV center to be a state (NV?) of having a negative electric charge, and spin states of the NV? centers to be aligned in one direction.

Abstract: A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

Abstract: A diamond crystal according to the present invention has an NV region containing a complex (NV center) of nitrogen substituted with a carbon atom and a vacancy located adjacent to the nitrogen, on a surface or in the vicinity of the surface, wherein the NV region has a donor concentration equal to or higher than the concentration of the NV centers, or a crystal of the NV region is a {111} face or a face having an off-angle that is ±10 degrees or less against the {111} face, and a principal axis of the NV center is a <111> axis that is perpendicular to the {111} face. Such a diamond crystal enables almost 100% of the NV center to be a state (NV?) of having a negative electric charge, and spin states of the NV? centers to be aligned in one direction.

Abstract: The present invention provides a diamond semiconductor device which includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.

Abstract: The present invention provides a diamond semiconductor device which includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.

Abstract: An image display device includes a resin film, an organic film which is formed above the resin film, a circuit layer which is formed above the organic film and includes at least a thin film transistor, and a barrier layer which is formed between the organic film and the circuit layer. The organic film has a first surface which faces the circuit layer and a side surface which crosses the first surface. The barrier layer covers the first surface and the side surface.

Abstract: A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

Abstract: An image display device comprises: a first substrate having flexure property; a first resin layer which is attached to the first substrate and over which thin film transistors are located; a barrier layer which comprises an inorganic film covering a surface of the resin layer; and a first thin film layer and a second thin film layer which are located so as to sandwich the first resin layer with the barrier layer disposed therebetween.

Abstract: A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

Abstract: An electrostatic capacitance type touch panel includes: a substrate; a plurality of first electrodes disposed in parallel on the substrate; an insulating film formed so as to cover the plurality of first electrodes; a plurality of second electrodes disposed in parallel to intersect the plurality of first electrodes on the insulating film; a plurality of first drawing wiring lines connected to the plurality of first electrodes to be drawn to a connection terminal; and a plurality of second drawing wiring lines connected to the plurality of second electrodes to be drawn to the connection terminal. The plurality of first drawing wiring lines have different lengths, larger widths as the lengths are shorter, and larger intervals between adjacent two of the plurality of first drawing wiring lines as the lengths are longer.

Abstract: A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

Abstract: Provided is an image display device including: a resin member; a TFT circuit layer formed above the resin member; and an inorganic film formed on a surface of the resin member to be formed between the resin member and the TFT circuit layer, in which the inorganic film has a stress acting thereon, the stress being, at a glass transition point (Tg) of the resin member, in the range of equal to or higher than ?300 MPa to equal to or lower than 200 MPa, while, at a room temperature, in the range of equal to or higher than ?400 MPa to equal to or lower than 50 MPa.

Abstract: An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.

Abstract: In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.