Patents by Inventor Mutsumi Katou

Mutsumi Katou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compound semiconductor device and method of manufacturing same
    Patent number: 9099545
    Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: August 4, 2015
    Assignee: Transphorm Japan, Inc.
    Inventors: Shinichi Akiyama, Kenji Nukui, Mutsumi Katou, Yoshitaka Watanabe, Tetsuya Itou, Yoichi Fujisawa, Toshiya Sato, Tsutomu Hosoda, Yuuichi Satou
  • COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
    Publication number: 20140021513
    Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.
    Type: Application
    Filed: September 23, 2013
    Publication date: January 23, 2014
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Shinichi AKIYAMA, Kenji NUKUI, Mutsumi KATOU, Yoshitaka WATANABE, Tetsuya ITOU, Yoichi FUJISAWA, Toshiya SATO, Tsutomu HOSODA, Yuuichi SATOU
  • Method of manufacturing compound semiconductor device with gate electrode forming before source electrode and drain electrode
    Patent number: 8569124
    Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: October 29, 2013
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Shinichi Akiyama, Kenji Nukui, Mutsumi Katou, Yoshitaka Watanabe, Tetsuya Itou, Yoichi Fujisawa, Toshiya Sato, Tsutomu Hosoda, Yuuichi Satou
  • COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFCTURING SAME
    Publication number: 20110272742
    Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.
    Type: Application
    Filed: April 19, 2011
    Publication date: November 10, 2011
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Shinichi AKIYAMA, Kenji Nukui, Mutsumi Katou, Yoshitaka Watanabe, Tetsuya Itou, Yoichi Fujisawa, Toshiya Sato, Tsutomu Hosoda, Yuuichi Satou