Patents by Inventor Mutsumi Oka

Mutsumi Oka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090325227
    Abstract: The present invention provides a method for inexpensively, easily and efficiently modifying the C-terminus of a protein or peptide; a method for easily and reliably isolating a C-terminal peptide fragment of a protein or peptide; and a method for rapidly, accurately and reliably determining an amino acid sequence of a protein or peptide by using a mass spectroscope. A method comprising the step of adding a formylation reagent and a catalyst to a protein or peptide to convert a carboxyl group into an aldehyde group. A method comprising the step of reacting a nucleophilic reagent with the aldehyde group to modify the C-terminus of the protein or peptide. A method comprising the step of reacting a support having a nucleophilic group to immobilize the protein or peptide. A method comprising the step of fragmenting the immobilized protein or peptide, washing the support, and isolating the C-terminal peptide fragment from the support.
    Type: Application
    Filed: October 23, 2006
    Publication date: December 31, 2009
    Applicants: SHIMADZU CORPORATION, NARA WOMEN'S UNIVERSITY, OSAKA UNIVERSITY
    Inventors: Takashi Nakazawa, Mutsumi Oka, Kimiko Nishida, Minoru Yamaguchi, Hiroki Kuyama, Eiji Ando, Norikazu Ueyama, Takaaki Okamura, Susumu Tsunasawa
  • Patent number: 6593165
    Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: July 15, 2003
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takahiro Takimoto, Naoki Fukunaga, Isamu Ohkubo, Toshimitsu Kasamatsu, Mutsumi Oka, Masaru Kubo
  • Publication number: 20020137246
    Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.
    Type: Application
    Filed: May 23, 2002
    Publication date: September 26, 2002
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Takahiro Takimoto, Naoki Fukunaga, Isamu Ohkubo, Toshimitsu Kasamatsu, Mutsumi Oka, Masaru Kubo
  • Patent number: 6433366
    Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: August 13, 2002
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takahiro Takimoto, Naoki Fukunaga, Isamu Ohkubo, Toshimitsu Kasamatsu, Mutsumi Oka, Masaru Kubo
  • Patent number: 6313484
    Abstract: A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separatio
    Type: Grant
    Filed: December 28, 1999
    Date of Patent: November 6, 2001
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Isamu Ohkubo, Masaru Kubo, Naoki Fukunaga, Takahiro Takimoto, Mutsumi Oka, Toshimitsu Kasamatsu