Abstract: A reticle set includes a first reticle including a first wiring pattern having a first termination pattern; a second reticle including a plurality of via patterns; and a third reticle including a second wiring pattern having a second termination pattern and a second line pattern connected to an end of the second termination pattern.

Abstract: The present invention provides an noise suppression circuit comprises an internal circuit which has a high and a low level terminals. The low level terminal is connected to a low level power supply (GND) line. The noise suppression circuit further comprises a first transistor in which one main electrode is connected to the high level terminal of the circuit, a bypass capacitor connected between the other main electrode of the first transistor and the low level power supply line, and a second transistor connected between the other main electrode of the first transistor and a high level power supply (VDD) line. The first transistor is conductive when the internal circuit is active, and is not conductive when the internal circuit is inactive. The second transistor is not conductive when the internal circuit is active, and is conductive when the internal circuit is inactive.

Abstract: A reticle set includes a first reticle including a first wiring pattern having a first termination pattern; a second reticle including a plurality of via patterns; and a third reticle including a second wiring pattern having a second termination pattern and a second line pattern connected to an end of the second termination pattern.

Abstract: A reticle set includes a first reticle including a first wiring pattern having a first termination pattern; a second reticle including a plurality of via patterns; and a third reticle including a second wiring pattern having a second termination pattern and a second line pattern connected to an end of the second termination pattern.

Abstract: An automated wiring pattern layout method is provided. With this method, a first wiring pattern is generated with width W and extending in a first direction, and a second wiring pattern is generated with width W and extending in a direction perpendicular to the first wiring pattern in a manner such that the end thereof ends at the end portion of the first wiring pattern. Moreover, an overlapping region is generated by bending an end of either one of the first or the second wiring pattern at a right angle to produce an L-shaped extension and overlaying the first and the second wiring pattern, and a rectangular-shaped VIA pattern is generated at the overlapping region.

Abstract: The present invention provides an noise suppression circuit comprises an internal circuit which has a high and a low level terminals. The low level terminal is connected to a low level power supply (GND) line. The noise suppression circuit further comprises a first transistor in which one main electrode is connected to the high level terminal of the circuit, a bypass capacitor connected between the other main electrode of the first transistor and the low level power supply line, and a second transistor connected between the other main electrode of the first transistor and a high level power supply (VDD) line. The first transistor is conductive when the internal circuit is active, and is not conductive when the internal circuit is inactive. The second transistor is not conductive when the internal circuit is active, and is conductive when the internal circuit is inactive.

Abstract: A noise suppression circuit encompasses an internal circuit, a bypass capacitor, first and second transistors. The internal circuit has high and low level terminals, and the low level terminal is connected to a low level power supply line. The internal circuit is supplied with enable and inverted enable signals. The first transistor has a first control electrode, and one main electrode is connected to the high level terminal. The first control electrode is supplied with the inverted enable signal. The bypass capacitor is connected between the other main electrode of the first transistor and the low level power supply line. The second transistor is connected between the other main electrode of the first transistor and a high level power supply line. The second transistor has a second control electrode supplied with the enable signal. The second transistor is not conductive when the internal circuit is active.

Abstract: A layout design system of a semiconductor integrated circuit, comprising: a library information storage unit configured to register a basic via shape list; a technology database storage unit configured to register a list expressing an optimum wire terminating process for each via shape of said basic via shape list registered in said library information storage unit; and a central processing control unit configured to refer to the lists respectively registered in said library information storage unit and said technology database storage unit, select an optimum line processing, and execute a line design.

Abstract: A reticle set includes a first reticle including a first wiring pattern having a first termination pattern; a second reticle including a plurality of via patterns; and a third reticle including a second wiring pattern having a second termination pattern and a second line pattern connected to an end of the second termination pattern.

Abstract: A computer-implemented method for designing a semiconductor integrated circuit, which optimizes the propagation delay of a path from a signal input terminal (source) to a signal output terminal (sink) on the same net, includes: calculating the ratio of the total sum of a gate input load capacitance to the wiring capacitance of the path from the source to the sink as a process variation sensitivity relating to the capacitance component of the path to be designed from the source to the sink, based on a circuit design information of a gate level of the semiconductor integrated circuit to be designed; and optimizing the process variation sensitivity relating to the capacitance component of each path in order that the process variation sensitivities relating to the capacitance components of all the paths are smaller than a reference value.

Abstract: A clock layout method comprises accepting circuit information on a logic circuit, placing a route driver on a semiconductor chip and forming initial clock routing with an H-tree structure in a local area and with a star structure in a global area, specifying a second node which first appears on a first wire among a plurality of wires branching from an arbitrary first node in the initial clock routing, specifying at least a third node which is the second to appear on a wire other than the first wire among the plurality of wires branching from the first node, defining the defined third node which exists in a direction within a predetermined angle from an input direction of a signal inputted to the second node, among the third nodes, folding a wire from the first node up to the defined third node and a node present therebetween.

Abstract: With an automatic layout method, a first line having a first line width is generated in a prescribed direction. A second line having a second line width and extending at an oblique angle with respect to the first line is generated, so that the second line terminates at an end portion of the first line with an overlapped area. One or more VIA patterns are read out of a database according to the shape of the overlapped area. The VIA patterns are placed in the overlapped area, so that one of the VIA patterns is located at the intersection of the center lines of the first and second lines. The VIA pattern is a combination of parallelograms, including squares and rectangles.

Abstract: An automated wiring pattern layout method is provided. With this method, a first wiring pattern is generated with width W and extending in a first direction, and a second wiring pattern is generated with width W and extending in a direction perpendicular to the first wiring pattern in a manner such that the end thereof ends at the end portion of the first wiring pattern. Moreover, an overlapping region is generated by bending an end of either one of the first or the second wiring pattern at a right angle to produce an L-shaped extension and overlaying the first and the second wiring pattern, and a rectangular-shaped VIA pattern is generated at the overlapping region.

Abstract: A layout design system of a semiconductor integrated circuit, comprising: a library information storage unit configured to register a basic via shape list; a technology database storage unit configured to register a list expressing an optimum wire terminating process for each via shape of said basic via shape list registered in said library information storage unit; and a central processing control unit configured to refer to the lists respectively registered in said library information storage unit and said technology database storage unit, select an optimum line processing, and execute a line design.

Abstract: In a pattern correction method, design layout data of a pattern designed by an automated layout unit is entered. An environmental profile is determined based on whether or not another graphics pattern exists at the surroundings of each correction target cell included in the entered design layout data. A target cell name is replaced with a prescribed cell name of correction pattern corresponding to the determined environmental profile by referencing a cell replacement table. An OPC correction pattern corresponding to the replaced cell name is imported from a cell library.

Abstract: An automated wiring pattern layout method is provided. With this method, a first wiring pattern is generated with width W and extending in a first direction, and a second wiring pattern is generated with width W and extending in a direction perpendicular to the first wiring pattern in a manner such that the end thereof ends at the end portion of the first wiring pattern. Moreover, an overlapping region is generated by bending an end of either one of the first or the second wiring pattern at a right angle to produce an L-shaped extension and overlaying the first and the second wiring pattern, and a rectangular-shaped VIA pattern is generated at the overlapping region.

Abstract: A layout design system of a semiconductor integrated circuit, comprising: a library information storage unit configured to register a basic via shape list; a technology database storage unit configured to register a list expressing an optimum wire terminating process for each via shape of said basic via shape list registered in said library information storage unit; and a central processing control unit configured to refer to the lists respectively registered in said library information storage unit and said technology database storage unit, select an optimum line processing, and execute a line design.

Abstract: A semiconductor integrated circuit, a supply method of supplying multiple supply voltages therefor, and a record medium for storing a program of the supply method for supplying multiple voltages therefor in which a first cell to which multiple supply voltages are supplied is extracted (Step S1), the extracted cells are divided into groups (Step S2), cells for voltage supply are added and arranged according to the number of the groups (Step S3), and the cell for the voltage supply are connected to the first cell for supplying the plurality of voltages through a net for a power source supply (Step S4).

Abstract: There are disclosed a semiconductor integrated circuit device, a semiconductor integrated circuit wiring method and a cell arranging method, which can reduce delay in a semiconductor integrated circuit and improve noise resistibility, achieve facility of wiring design, and reduce production cost.

Abstract: A computer-implemented method for designing a semiconductor integrated circuit, which optimizes the propagation delay of a path from a signal input terminal (source) to a signal output terminal (sink) on the same net, includes: calculating the ratio of the total sum of a gate input load capacitance to the wiring capacitance of the path from the source to the sink as a process variation sensitivity relating to the capacitance component of the path to be designed from the source to the sink, based on a circuit design information of a gate level of the semiconductor integrated circuit to be designed; and optimizing the process variation sensitivity relating to the capacitance component of each path in order that the process variation sensitivities relating to the capacitance components of all the paths are smaller than a reference value.