Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Abstract: A method of etching a semiconductor device preventing tapering of a gate electrode edge includes a main etching of an electrode or wiring material supported by a dielectric film at a semiconductor substrate surface to expose the dielectric film. After the main etching step, residues of the electrode or the wiring material by sequentially etching utilizing a first gas mixture including a halogen-containing gas and an additive gas suppressing etching of the dielectric film by the halogen-containing gas, and in a second gas mixture gas including the halogen-containing gas and the additive gas and having the additive gas amount in a larger concentration than the first gas mixture.

Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Abstract: Disclosed is a manufacturing method of a semiconductor device which is intended to prevent occurrence of tapering of the shape of a gate electrode edge portion as has been deemed to be a problem at high-selectivity overetching process steps using a gas of HBr/O2 based gas.

Abstract: The present plasma generating apparatus includes a vacuum container an anode and a cathode formed by a plurality of electrodes, a power supply for applying a high voltage to anode and cathode, and switching elements for switching the electrodes in anode and cathode to which the high voltage is applied. The combinations of the electrodes are switched by switching elements so as to form a sheet plasma at any desired angle relative to the directional electromagnetic waves.

Abstract: A plasma generating apparatus includes a vacuum container, an anode and a cathode including multiple electrodes, a power supply for applying a high voltage to the anode and the cathode, and switching elements for switching the electrodes in the anode and the cathode to which the high voltage is applied. The combination of the electrodes are switched by switching elements to form a sheet plasma at any desired angle relative to directional electromagnetic waves.

Abstract: A plasma generating apparatus capable of improving the uniformity of a plasma processing and coping with a larger diameter of a substrate is obtained. Microwaves are distributed and emitted from a waveguide through the branching portions of a T branch to four rod antennas. The microwaves are introduced through four dielectric tubes into a vacuum vessel. In the vacuum vessel, a multi-cusp magnetic field and an electron cyclotron resonance region are caused by permanent magnets located around the vessel and, by an interaction between a vibrational electric field of the microwaves and a magnetic field, highly uniform plasma is generated in a region where a substrate or the like is subjected to a plasma processing.

Abstract: There is provided a plasma generating apparatus comprising: a waveguide for guiding a microwave; a vacuum vessel connected to the waveguide, having a means for supplying a gas for discharging electrons and a means for evacuating; and a dielectric member in a tube-like shape or a rod-like shape which is inserted in the vacuum vessel, wherein the dielectric member is provided with a means for emitting the microwave, whereby it is possible to apply the electric power of microwave effectively to plasma of high density exceeding so-called cut-off density and to homogenize the distribution of plasma in the vacuum vessel.