Patents by Inventor Mutuo Taniguchi

Mutuo Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6819570
    Abstract: In a circuit board of the present invention, a lead frame includes an electrode for mounting an electronic component. The lead frame is encapsulated in a resin portion. The lead frame includes a step portion exposed from a surface of the resin portion so that the electrode is formed. Accordingly, not only lead type electronic components but also surface mount type electronic components can be mounted on the surface of the circuit board. Therefore, because the electronic components can be concentrated, the lead frame circuit board can be miniaturized.
    Type: Grant
    Filed: February 6, 2003
    Date of Patent: November 16, 2004
    Assignee: Anden Co., Ltd.
    Inventors: Hideyuki Ohtani, Mutuo Taniguchi
  • Publication number: 20030174477
    Abstract: In a circuit board of the present invention, a lead frame includes an electrode for mounting an electronic component. The lead frame is encapsulated in a resin portion. The lead frame includes a step portion exposed from a surface of the resin portion so that the electrode is formed. Accordingly, not only lead type electronic components but also surface mount type electronic components can be mounted on the surface of the circuit board. Therefore, because the electronic components can be concentrated, the lead frame circuit board can be miniaturized.
    Type: Application
    Filed: February 6, 2003
    Publication date: September 18, 2003
    Inventors: Hideyuki Ohtani, Mutuo Taniguchi
  • Patent number: 6107669
    Abstract: An intelligence power device (IPD), having a temperature-sensitive and heat-damage protecting function, is used as a semiconductor relay which controls load current supplied to an electric load. A target sensitive temperature T.sub.SD of IPD is determined according to an allowable load current value, using an equation T.sub.SD =I.sup.2 .times.R.sub.ON .times.R.sub.TEMP +T.sub.ROOM, where I represents an allowable load current value, R.sub.ON represents an on-resistance value of a power MOSFET, R.sub.TEMP represents a thermal resistance value of an entire radiation system of IPD, and T.sub.ROOM represents an ambient temperature of IPD. When the load current exceeds the allowable load current value, IPD stops the load current so that the load circuit can be prevented from being subjected to excessively large current.
    Type: Grant
    Filed: December 30, 1997
    Date of Patent: August 22, 2000
    Assignee: Anden Co., Ltd.
    Inventors: Hirofumi Mokuya, Mutuo Taniguchi